Epitaxial Growth Device Ceiling Board Configuration
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Solution Overview
Problem
Conventional epitaxial growth devices face challenges in increasing growth rate without escalating deposition costs and particle formation, as introducing a large quantity of first material gas is undesirable due to increased costs and particle issues.
Innovation Solution
The epitaxial growth device features a reaction chamber with a ceiling board and sidewall configuration that allows for a reduced distance between the ceiling board and substrate, combined with rectification grooves and a susceptor ring design to enhance reactant gas rectilinearity and reduce boundary layer diffusion, thereby improving growth rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a large quantity of first material gas is included in the reactant gas to increase the growth rate, then the growth rate is improved, but the deposition cost increases and particle formation increases
Solution Approach 1:
The patent changes the physical parameters of the reaction system by reducing the distance between the ceiling board and substrate to less than 10mm, which alters the boundary layer characteristics and gas flow dynamics. This enables achieving high growth rates with reduced material gas quantity by optimizing the reaction environment rather than simply increasing reactant concentration.
Solution Approach 2:
The invention introduces a vertical dimension optimization by controlling the distance parameter between ceiling board and substrate, creating a confined reaction space that enhances reaction efficiency without requiring increased material gas flow. This dimensional control transforms the reaction kinetics without escalating material consumption.
2Productivity
If a large quantity of first material gas is included in the reactant gas to increase the growth rate, then the growth rate is improved, but particle formation increases
Solution Approach 1:
By changing the geometric parameter of the reaction chamber (distance between ceiling board and substrate to less than 10mm), the patent modifies the boundary layer thickness and gas flow characteristics. This enables achieving high growth rates while suppressing particle formation through optimized reaction conditions rather than increased material gas quantity.
3Productivity
If the distance between the ceiling board and substrate is reduced to suppress boundary layer diffusion, then the growth rate is improved, but heat stress on the support structure increases
Solution Approach 1:
The support structure is segmented into a ring-like configuration with through-holes, distributing the thermal and mechanical stress across multiple structural elements rather than concentrating it in a single solid support. This segmentation enables the ceiling board to be positioned close to the substrate while maintaining structural integrity under heat stress.
Solution Approach 2:
The ring-like support portion with through-holes creates a flexible yet rigid structure that can withstand thermal stress while maintaining the reduced distance configuration. The through-holes reduce the overall mass and thermal capacity of the support structure, improving heat dissipation while maintaining structural strength.
4Productivity
If the distance between the ceiling board and substrate is reduced to less than 10 mm, then boundary layer diffusion is suppressed and growth rate is improved, but the rectilinear property of reactant gas flow decreases
Solution Approach 1:
Rectification grooves are introduced at specific locations (inlet and outlet of the side wall) to locally correct the gas flow trajectory. These grooves create localized flow guidance zones that restore rectilinear flow properties without affecting the overall reduced distance configuration, thereby maintaining both high growth rate and stable gas flow characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration suppresses boundary layer diffusion, increases gas velocity and density, and enhances reaction efficiency, resulting in a significant improvement in growth rate while minimizing particle formation and cost increases.
Implementation Method 1
a ceiling board which transmit light... heating unit located outside of the reaction chamber for heating the substrate set inside of the reaction chamber via the ceiling board
Implementation Method 2
diffusion of a boundary layer can be suppressed when the reactant gas is introduced into the reaction chamber
Implementation Method 3
rectification grooves may be provided in at least both ends of the wall along a direction of a flow of the reactant gas. The rectification grooves can improve a rectilinear property of the reactant gas
Implementation Method 4
an epitaxial growth device for growing an epitaxial film on a substrate using an epitaxial growth method
Implementation Method 5
a reactant gas is introduced parallel to a horizontal direction of the substrate so that a film is deposited on the substrate
Data Source
AI summary
An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.