Epitaxial Deposition Chamber Layout for Uniform Heating and Gas Flow
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Solution Overview
Problem
Conventional process chambers face challenges in achieving precise temperature control and uniformity, which affects the throughput and production yields in semiconductor substrate processing.
Innovation Solution
The process chamber design includes an upper and lower lamp module, a substrate support, upper and lower windows, and a chamber body assembly with specific configurations for improved gas flow and heating, featuring a substrate transfer passage, exhaust passages, and injector passages to enhance thermal control and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional process chambers are used, then the structure is simple, but temperature control precision and uniformity are insufficient
Solution Approach 1:
The chamber body is divided into multiple sections with separate heating zones (upper and lower lamp modules) and independent exhaust passages. This segmentation allows precise temperature control in different regions while maintaining a manageable overall structure, resolving the contradiction between temperature control precision and structural complexity.
Solution Approach 2:
Different portions of the chamber body are equipped with different functions: upper and lower lamp modules for heating, specific exhaust passages for gas removal, and injector passages for gas introduction. This local differentiation enables precise temperature control and uniformity without requiring complete redesign of the entire chamber structure.
2Productivity
If conventional heating and gas flow configurations are used, then the design is simple, but throughput and production yields are limited
Solution Approach 1:
The chamber incorporates both upper and lower lamp modules positioned on opposite sides of the substrate, transitioning from single-sided to multi-sided heating. This dimensional expansion enables faster and more uniform heating, improving throughput while distributing thermal load across multiple components rather than increasing complexity in a single element.
Solution Approach 2:
Multiple exhaust passages are integrated into the chamber body structure, combining gas removal functionality with the chamber walls. This merging of functions improves gas flow efficiency and throughput without requiring separate external exhaust systems, thereby increasing productivity without proportionally increasing overall system complexity.
3Manufacturing precision
If conventional exhaust and injection systems are used, then gas flow control is basic, but process gas distribution uniformity is poor
Solution Approach 1:
Injector passages are positioned at specific locations within the chamber body to create localized gas introduction zones. This local placement strategy, combined with strategically positioned exhaust passages, enables uniform gas distribution across the substrate surface without requiring complex flow control mechanisms throughout the entire chamber.
Solution Approach 2:
The chamber body passages act as intermediaries between the gas supply system and the substrate. By designing specific injector and exhaust passage configurations within the chamber walls, the system achieves uniform gas distribution through controlled flow paths rather than direct gas introduction, improving precision without excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves process gas flow and thermal control, leading to better throughput and increased yields while reducing the cost of chamber components and facilitating easier replacement of worn parts.
Implementation Method 1
a plurality of heating lamps disposed below and above the substrate
Implementation Method 2
One or more upper chamber exhaust passages are disposed through the chamber body assembly. Each of the one or more upper chamber exhaust passages have an upper chamber exhaust passage opening disposed above the lower chamber exhaust passage.
Data Source
AI summary
The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.