Epitaxial Contact Layer Openings for Low-Loss Optoelectronic Semiconductors

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Solution Overview

Problem

Existing optoelectronic semiconductor devices face challenges in connecting a contact layer to a semiconductor layer stack efficiently due to the presence of additional layers, leading to electrical barriers and potential radiation losses.

Innovation Solution

The device includes an epitaxially grown layer with openings that allow electrical connection of a conductive layer to the first semiconductor layer, utilizing growth parameters to form these openings during layer formation, and optionally using a conductivity enhancing layer and semiconductor contact layers to improve conductivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If additional layers are applied over the semiconductor layer arrangement for generating electromagnetic radiation, then the device structure is completed for radiation generation, but electrical connection between the contact layer and semiconductor layer stack becomes difficult and ohmic resistance increases

Engineering Contradiction:

Improveelectrical connection qualityVSAvoidlayer structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by forming openings in the epitaxially grown layer during the epitaxial growth process itself, before subsequent contact layer deposition. This is achieved by setting specific growth parameters (temperature, pressure, gas flow rates) that cause the layer to grow with inherent openings or voids, thereby pre-establishing electrical connection pathways before the contact layer is applied.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent utilizes porous materials by creating an epitaxially grown layer with controlled porosity or openings. This porous structure allows electrical conductors to penetrate through the insulating or semi-insulating epitaxial layer, establishing electrical connections without requiring separate through-hole formation steps. The porous nature is achieved through controlled epitaxial growth conditions.

Inventive Principle:

Principle #31Porous materials

2Reliability

If openings are formed in the epitaxially grown layer to enable electrical connection, then ohmic resistance is reduced, but the epitaxial growth process becomes more complex

Engineering Contradiction:

Improveelectrical conductivityVSAvoidgrowth process simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies parameter changes by modifying epitaxial growth conditions (temperature, pressure, gas composition, flow rates) to control the formation of openings in the epitaxially grown layer. By adjusting these parameters, the growth process inherently creates the desired porous structure with appropriate opening size, distribution, and connectivity, achieving electrical conductivity without additional manufacturing steps.

Inventive Principle:

Principle #35Parameter changes

3Loss of energy

If the epitaxially grown layer is made thicker to improve insulation, then radiation losses are minimized, but electrical connection through the layer becomes more difficult

Engineering Contradiction:

Improveradiation lossVSAvoidelectrical connection quality

Core Design Contradiction:

Loss of energyVSReliability

Solution Approach 1:

The patent resolves this contradiction by creating a thicker epitaxially grown layer with controlled porosity. The openings or voids within the thick layer provide electrical conduction pathways while the overall layer thickness maintains insulation properties and minimizes radiation losses. The porous structure allows the layer to simultaneously achieve both electrical connectivity and electrical isolation functions.

Inventive Principle:

Principle #31Porous materials

Solution Approach 2:

The patent applies composite materials by creating an epitaxially grown layer that combines insulating material with conductive pathways. The composite structure consists of the epitaxial material matrix containing embedded openings or voids that are subsequently filled with or surrounded by conductive materials, achieving both insulation and conduction in a single integrated layer.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables efficient electrical connection with reduced ohmic resistance and minimizes radiation losses, enhancing the performance of optoelectronic devices like LEDs and semiconductor lasers.

Implementation Method 1

an epitaxially grown layer over a first main surface of the first semiconductor layer

Methodology Applied

Scientific EffectEpitaxial growth: Epitaxy

Data Source

PatentUS20260020387A1Optoelectronic semiconductor device comprising an epitaxially grown layer and a method of manufacturing the optoelectronic semiconductor device

Publication Date: 2026.01.15 AMS OSRAM INT GMBH

AI summary

In an embodiment a method for manufacturing an optoelectronic semiconductor device includes forming a semiconductor layer stack comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active zone disposed between the first semiconductor layer and the second semiconductor layer, epitaxially growing a layer over a first main surface of the first semiconductor layer, wherein the epitaxially grown layer is based on growth parameters such that openings are formed in the epitaxially grown layer while epitaxially growing and forming a conductive layer over the epitaxially grown layer, wherein the conductive layer is electrically connected to the first semiconductor layer via the openings in the epitaxially grown layer.