Epitaxial Graphene Stack on Silicon Substrate
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Solution Overview
Problem
The manufacturing of electronic devices incorporating graphene is challenging due to difficulties in adjusting the number, position, and width of graphene layers, and the limited availability and high cost of compound single crystal substrates suitable for growing graphene layers.
Innovation Solution
A stack structure comprising a Si substrate with under layers such as hexagonal boron nitride (h-BN) or 3C—SiC, and epitaxial graphene layers, which allows for the growth of epitaxial graphene layers using methods like thermal CVD or MBE, enabling large-surface graphene formation and patterning for electronic devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the exfoliation method is used to manufacture graphene, then graphene can be obtained, but it is difficult to adjust the number, position, and width of graphene layers and obtain large-surface graphene layers
Solution Approach 1:
The patent introduces a buffer layer (such as h-BN or SiO2) as an intermediary between the substrate and the graphene layer. This buffer layer serves as a mediator that enables precise control over graphene growth while facilitating the formation of large-surface graphene layers through epitaxial growth processes. The buffer layer acts as a template that directs the number, position, and dimensions of the graphene layers formed thereupon.
2Area of stationary object
If a compound single crystal substrate is used to grow graphene layers, then large-surface graphene can be obtained, but the substrate is expensive and difficult to manufacture
Solution Approach 1:
The patent replaces expensive compound single crystal substrates with inexpensive silicon substrates that can be mass-produced using standard semiconductor manufacturing techniques. The silicon substrates serve as disposable, cost-effective platforms for growing large-surface graphene layers, eliminating the need for costly and difficult-to-manufacture compound single crystal substrates while maintaining the ability to produce large-area graphene.
3Adaptability or versatility
If a compound single crystal substrate is used to grow graphene layers, then graphene growth is enabled, but the type of substrate is very limited and not easy to apply to most manufacturing processes
Solution Approach 1:
The patent employs silicon substrates with buffer layers as a universal platform that can accommodate various graphene growth configurations and device architectures. This universal substrate system enables the formation of different numbers of graphene layers, various device types (transistors, interconnects, sensors), and integrates with standard semiconductor manufacturing processes, replacing the limited and specialized compound single crystal substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach facilitates the easy formation of large-surface epitaxial graphene layers, reducing mis-alignment issues and enhancing the uniformity and reproducibility of electronic devices, making them suitable for various applications including transistors, wiring, electrodes, and sensors.
Implementation Method 1
at least one epitaxial graphene layer formed on the under layer
Implementation Method 2
a Ni(111) layer between the Si substrate and the under layer; a Cu(111) layer between the Si substrate and the Ni(111) layer
Data Source
AI summary
Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer.