Epitaxial Layer Growth with Two-Step Defect Reduction Bake
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Solution Overview
Problem
Existing epitaxial layer growth processes struggle to produce high-quality, uniform layers with low defect counts, particularly for advanced semiconductor devices, as they are not well-suited for the stringent requirements of smaller feature sizes and increased complexity in ICs.
Innovation Solution
A two-step defect reduction bake process followed by a high-temperature epitaxial layer growth, involving a high-pressure and a lower-pressure bake, effectively reduces defects and contaminants, allowing for the formation of high-quality epitaxial layers with low defect counts and improved uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing low-temperature epitaxial layer growth processes are used, then the manufacturing process is simpler and lower cost, but the defect count is high and layer uniformity is poor
Solution Approach 1:
The baking process is divided into two distinct steps: a first baking step at a first temperature and a second baking step at a second temperature. This segmentation allows each step to address specific defects independently, achieving superior layer uniformity and low defect counts while maintaining process control
Solution Approach 2:
The two-step baking process is performed as a preliminary treatment before epitaxial layer growth. This preliminary action removes defects and contaminants from the substrate surface in advance, ensuring that the subsequent epitaxial growth produces high-quality layers with excellent uniformity
2Reliability
If existing epitaxial layer growth processes are used, then the process is faster and simpler, but the defect count is high which reduces production yield
Solution Approach 1:
The two-step baking process is performed as a preliminary treatment before epitaxial layer growth. This preliminary action removes defects and contaminants from the substrate surface in advance, ensuring that the subsequent epitaxial growth produces high-quality layers with excellent uniformity
Solution Approach 2:
The process uses different temperature parameters for the two baking steps, with the second temperature being higher than the first. This parameter change enables effective defect removal while controlling the overall process time and maintaining productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly reduces defects by 1000x compared to existing low-temperature processes, achieving excellent within-wafer and wafer-to-wafer thickness uniformity, enhancing production yield and device performance.
Implementation Method 1
a first pre-epitaxial layer deposition baking process is performed at a first pressure and first temperature. In some cases, after the first pre-epitaxial layer deposition baking process, a second pre-epitaxial layer deposition baking process is then performed at a second pressure and second temperature
Implementation Method 2
after the second pre-epitaxial layer deposition baking process and while at a growth temperature, a precursor gas may then be introduced into the processing chamber to deposit an epitaxial layer over the semiconductor wafer
Implementation Method 3
a precursor gas may then be introduced into the processing chamber to deposit an epitaxial layer
Data Source
AI summary
A method and structure for providing a two-step defect reduction bake, followed by a high-temperature epitaxial layer growth. In various embodiments, a semiconductor wafer is loaded into a processing chamber. While the semiconductor wafer is loaded within the processing chamber, a first pre-epitaxial layer deposition baking process is performed at a first pressure and first temperature. In some cases, after the first pre-epitaxial layer deposition baking process, a second pre-epitaxial layer deposition baking process is then performed at a second pressure and second temperature. In some embodiments, the second pressure is different than the first pressure. By way of example, after the second pre-epitaxial layer deposition baking process and while at a growth temperature, a precursor gas may then be introduced into the processing chamber to deposit an epitaxial layer over the semiconductor wafer.