Epitaxial h-BN/BNNT Structures for Mechanical and Thermal Stability

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Boron nitride nanotubes lack effective methods to enhance their mechanical and thermal properties while maintaining high purity and low defect rates, particularly in composite materials and aggregates.

Innovation Solution

The development of epitaxial h-BN/BNNT structures, comprising a boron nitride nanotube structure and a hexagonal boron nitride structure, where the hexagonal boron nitride is epitaxial with respect to the nanotube, is achieved through a process involving plasma generation and boron-containing material interaction, resulting in enhanced adherence to matrices and improved nucleation sites for metals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If conventional methods are used to synthesize boron nitride nanotubes, then production is achieved, but mechanical and thermal properties remain insufficient and defect rates are high

Engineering Contradiction:
Improvemechanical resistanceVSAvoiddefect rate
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent creates composite structures where hexagonal boron nitride (h-BN) layers are epitaxially grown on boron nitride nanotube (BNNT) surfaces. This composite architecture combines the high strength of BNNTs with the thermal stability and mechanical resistance of h-BN, achieving superior mechanical properties while maintaining low defect rates through controlled epitaxial growth that prevents random defect formation

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent employs plasma-enhanced chemical vapor deposition (PECVD) to precisely control growth parameters such as temperature, pressure, gas composition, and plasma power. By optimizing these parameters, the process achieves high-quality epitaxial h-BN layers with controlled thickness and crystal orientation, resulting in enhanced mechanical resistance and reduced defects compared to conventional synthesis methods

Inventive Principle:
Principle #35Parameter changes

2Temperature

If conventional synthesis methods are used, then boron nitride nanotubes are produced, but thermal stability is insufficient at high temperatures

Engineering Contradiction:
Improvethermal stabilityVSAvoidpurity
Core Design Contradiction:
TemperatureVSStability of the object's composition

Solution Approach 1:

The epitaxial h-BN/BNNT composite structures provide enhanced thermal stability because h-BN has higher thermal stability than amorphous or defective BN. The crystalline h-BN layers protect the underlying BNNT structure from thermal degradation, oxidation, and phase transitions at high temperatures, maintaining compositional purity and structural integrity up to extremely high temperatures

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent uses controlled plasma parameters and deposition conditions to grow highly crystalline h-BN layers with minimal defects and impurities. The epitaxial growth process ensures proper crystal orientation and atomic arrangement, resulting in high-purity structures with superior thermal stability that resist decomposition and maintain composition integrity at elevated temperatures

Inventive Principle:
Principle #35Parameter changes

3Force

If standard deposition techniques are used, then coating is achieved, but adherence to matrices is insufficient

Engineering Contradiction:
ImproveadherenceVSAvoidprocess complexity
Core Design Contradiction:
ForceVSDevice complexity

Solution Approach 1:

The patent replaces conventional mechanical or chemical adhesion methods with plasma-enhanced epitaxial growth. The plasma process creates strong chemical bonds between h-BN and the substrate through in-situ deposition, achieving superior adherence without requiring complex surface treatments, primers, or mechanical interlocking structures. The epitaxial nature ensures lattice matching and strong interfacial bonding

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The plasma acts as an intermediary that facilitates strong bonding between the h-BN layer and the substrate. The plasma provides reactive species that enhance surface preparation, promote nucleation, and create strong chemical bonds during deposition, achieving excellent adherence while maintaining a relatively simple single-step process that combines surface treatment and coating deposition

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The epitaxial h-BN/BNNT structures exhibit improved mechanical resistance, thermal stability, and nano-nucleation capabilities, providing excellent properties even at high temperatures with reduced defect rates and high purity, making them suitable for various applications.

Implementation Method 1

converting at least a portion of the mixture to plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

the first hexagonal boron nitride structure epitaxial with respect to the first boron nitride nanotube structure

Methodology Applied
Scientific EffectEpitaxy: Epitaxy

Implementation Method 3

improved nucleation sites for metals

Methodology Applied
Scientific EffectNucleation: Nucleation

Data Source

PatentUS11851326B2Compositions and aggregates comprising boron nitride nanotube structures, and methods of making
Publication Date: 2023.12.26 HEXIVON INC
  • US11851326B2 patent drawing
  • US11851326B2 patent drawing
  • US11851326B2 patent drawing

AI summary

A composition (or an aggregate) comprising a h-BN/BNNT structure that comprises a boron nitride nanotube structure and at least a first hexagonal boron nitride structure. Also, a composition comprising at least a first epitaxial h-BN/BNNT structure and at least one metal adhered to the first epitaxial h-BN/BNNT structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.