Epitaxial Josephson Junction Transmon Device Crystallinity
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Solution Overview
Problem
Current methods for forming Josephson junction transmon devices face challenges in achieving consistent crystallinity and preventing defects during the fabrication of epitaxial layers, which affects the coherence time and performance of these devices.
Innovation Solution
The use of an in situ epitaxial film growth process to grow epitaxial Josephson junction transmon devices, where buffer, quantum well, and removable epitaxial layers are formed to ensure desirable crystallinity and prevent oxidation and defects, along with the formation of a gap between conductive structures and the transmon device to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form Josephson junction transmon devices, then fabrication can be performed, but crystallinity consistency deteriorates and defects increase
Solution Approach 1:
The patent applies preliminary action by forming buffer layers and protective epitaxial layers before creating the Josephson junction transmon device. These preliminary layers prepare the substrate and existing structures to ensure desirable crystallinity and prevent oxidation and defects during subsequent fabrication steps, directly resolving the crystallinity consistency issue.
Solution Approach 2:
The patent uses intermediary protective epitaxial layers that are formed between the substrate and the Josephson junction transmon device. These intermediary layers act as mediators to prevent direct exposure of critical structures to harmful environments, preventing oxidation and defects while maintaining crystallinity consistency.
2Reliability
If protective epitaxial layers are formed, then oxidation and defects are prevented, but device complexity increases
Solution Approach 1:
The patent merges multiple protective functions into integrated epitaxial layers that are formed as part of the standard fabrication process. The buffer layers and protective epitaxial layers are combined with the device formation steps, allowing defect prevention without proportionally increasing process complexity.
Solution Approach 2:
The patent creates an inert protective environment through epitaxial layers that shield the Josephson junction transmon device from oxidation and defects. These layers provide a protective atmosphere during fabrication and operation, preventing harmful interactions with the environment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in improved consistency, coherence time, and lifespan of the Josephson junction transmon devices, facilitating better performance in quantum computing applications.
Implementation Method 1
an in situ epitaxial film growth process to grow epitaxial Josephson junction transmon devices, where buffer, quantum well, and removable epitaxial layers are formed
Implementation Method 2
an epitaxial Josephson junction tunneling channel coupled to the first superconducting region and the second superconducting region
Data Source
AI summary
Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate an epitaxial Josephson junction transmon device are provided. According to an embodiment, a device can comprise a substrate. The device can further comprise an epitaxial Josephson junction transmon device coupled to the substrate. According to an embodiment, a device can comprise an epitaxial Josephson junction transmon device coupled to a substrate. The device can further comprise a tuning gate coupled to the substrate and formed across the epitaxial Josephson junction transmon device. According to an embodiment, a device can comprise a first superconducting region and a second superconducting region formed on a substrate. The device can further comprise an epitaxial Josephson junction tunneling channel coupled to the first superconducting region and the second superconducting region.