Semiconductor Epitaxial Layer Growth With Cyclic Interface Repair
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Solution Overview
Problem
The existing method for manufacturing semiconductor epitaxial layers, which involves hydrogen bake followed by epitaxial growth, often results in surface defects, particularly pit defects, due to lattice mismatch caused by impurities from well implantation, affecting product performance and yield.
Innovation Solution
A method involving multiple cyclic steps of interface repair processes and epitaxial growth is employed, where each cycle includes a thin undoped epitaxial sublayer formation followed by repair, gradually reducing defects, culminating in a bulk layer formation to eliminate lattice mismatch defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen bake is performed before epitaxial growth to repair surface defects, then surface defect repair is improved, but new pit defects are generated due to lattice mismatch from impurities
Solution Approach 1:
The epitaxial growth process is segmented into multiple stages: first epitaxial growth forming a thin layer, then interface repair, followed by second epitaxial growth. This segmentation allows the interface repair to occur at an optimal point in the process, repairing defects without generating excessive new pit defects, thus resolving the contradiction between surface defect repair and pit defect generation
Solution Approach 2:
The first epitaxial growth is performed as a preliminary action before the interface repair process. This creates a fresh surface with controlled properties that allows the subsequent hydrogen bake to repair defects more effectively without generating excessive lattice mismatch issues, as the impurity distribution is already partially established
2Manufacturing precision
If multiple cyclic interface repair and epitaxial growth steps are performed, then surface defect reduction is improved, but manufacturing complexity increases
Solution Approach 1:
Different epitaxial growth conditions are applied at different stages: the first epitaxial growth uses specific conditions to form a thin layer suitable for subsequent repair, while the second epitaxial growth uses different conditions optimized for bulk layer formation. This local quality differentiation achieves superior surface defect reduction while making the complex process more manageable through clear stage differentiation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces or eliminates surface defects, particularly pit defects, by controlling defect formation and introduction of new impurities, thereby improving the quality and yield of semiconductor epitaxial layers.
Implementation Method 1
performing a first interface repair process to repair a defect exposed on the surface of a previous layer
Implementation Method 2
performing a first interface repair process to repair a defect exposed on the surface of a previous layer
Implementation Method 3
performing first epitaxial growth to form an undoped first epitaxial sublayer on the surface of the previous layer
Data Source
AI summary
The present disclosure discloses a method for manufacturing a semiconductor epitaxial layer, including: forming a well region. A transition layer is formed by performing cyclic steps, where the cyclic steps includes: performing a first interface repair process to repair a defect exposed on the surface of a previous layer; and performing first epitaxial growth to form an undoped first epitaxial sublayer on the surface of the previous layer. A bulk layer of the semiconductor epitaxial layer is formed, including: performing a second interface repair process to repair a defect exposed on the surface of the transition layer; and performing second epitaxial growth to form the undoped bulk layer on the surface of the transition layer. The rate of the first epitaxial growth is less than the rate of the second epitaxial growth, and the thickness of the bulk layer is greater than the thickness of each first epitaxial sublayer.