Epitaxial Layer Growth Under Vapor Pressure Equilibrium
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Solution Overview
Problem
Variation in carrier concentration of epitaxial layers leads to deteriorated on-resistance characteristics, threshold voltage variations, and potential semiconductor device breakdown, necessitating uniformization of carrier concentration.
Innovation Solution
A method involving growth of epitaxial layers under an equilibrium vapor pressure environment, with quantification steps to achieve a coefficient of variation of 0.05 or less and a standard deviation of 1×10^17 cm^-3 or less, ensuring uniform carrier concentration across the epitaxial layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional epitaxial growth methods are used, then production efficiency is maintained, but carrier concentration uniformity deteriorates
Solution Approach 1:
The invention changes the growth parameters by controlling the vapor pressure to maintain SiC-Si or SiC-C equilibrium throughout the epitaxial growth process. This parameter control ensures uniform carrier concentration (coefficient of variation ≤ 0.05) while maintaining production efficiency through optimized growth conditions including temperature gradients and vapor pressure management.
Solution Approach 2:
The invention utilizes phase transition equilibrium between solid SiC and vapor phase Si or C. By maintaining equilibrium vapor pressure conditions during growth, the process achieves uniform dopant distribution and carrier concentration uniformity while preserving productive growth rates through controlled phase equilibrium.
2Reliability
If epitaxial layer carrier concentration is not uniformized, then manufacturing process is simple, but device reliability deteriorates
Solution Approach 1:
The invention implements reliability improvement through parameter control of vapor pressure equilibrium conditions during epitaxial growth. By maintaining SiC-Si or SiC-C equilibrium, the process achieves carrier concentration uniformity (standard deviation ≤ 1×10^17 cm^-3) that prevents device breakdown, while the manufacturing complexity remains manageable through established equilibrium growth techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses carrier concentration variations, improving semiconductor device yield by reducing the risk of breakdown and maintaining energization capacity.
Implementation Method 1
a growth step of growing the epitaxial layer on a bulk layer under an equilibrium vapor pressure environment
Implementation Method 2
growing the epitaxial layer on a bulk layer under an equilibrium vapor pressure environment
Data Source
AI summary
An object of the present invention is to provide a novel technique for uniformizing a carrier concentration of an epitaxial layer.The present invention is a method for uniformizing the carrier concentration of an epitaxial layer, the method including a growth step S10 of growing the epitaxial layer 20 under an equilibrium vapor pressure environment on the bulk layer 10. As described above, including the growth step S10 of growing the epitaxial layer 20 under an equilibrium vapor pressure environment can suppress the variation in the carrier concentration in the epitaxial layer 20.