Epitaxial Oxide FET Structures for High Breakdown Voltage
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Solution Overview
Problem
Current semiconductor devices, such as UV LEDs and high-power RF switches, face limitations in achieving high breakdown voltages and efficient electrical-to-optical energy conversion due to the use of low bandgap semiconductors.
Innovation Solution
The development of epitaxial oxide materials and structures, including superlattices and chirp layers, which are integrated into semiconductor devices to enhance their electrical and optical properties, such as increased bandgaps and improved carrier multiplication mechanisms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If low bandgap semiconductors are used in semiconductor devices, then device complexity is reduced, but breakdown voltage is limited
Solution Approach 1:
The patent employs composite material structures including heteroepitaxial growth of wide bandgap oxide semiconductors (such as Ga2O3, ZnO) combined with conventional semiconductors. These composite structures enable high breakdown voltage characteristics while maintaining manageable device complexity through systematic integration of different material systems with complementary properties.
Solution Approach 2:
The patent segments the semiconductor device into multiple functional layers with distinct bandgap characteristics. By dividing the device structure into regions with different semiconductor materials (wide bandgap for high voltage blocking, narrow bandgap for carrier injection), the device achieves high breakdown voltage without requiring the entire structure to be complex.
2Loss of energy
If low bandgap semiconductors are used, then manufacturing is easier, but electrical-to-optical energy conversion efficiency is reduced
Solution Approach 1:
The patent applies local quality by assigning different semiconductor materials to specific regions based on their optimal properties. Wide bandgap materials are positioned in regions requiring high efficiency electrical-to-optical conversion, while conventional materials are used in regions where ease of manufacture and carrier injection are priorities. This spatial differentiation of material properties maximizes overall conversion efficiency without sacrificing manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These epitaxial oxide materials and structures enable the creation of semiconductor devices with higher breakdown voltages and improved efficiency in electrical-to-optical energy conversion, facilitating applications in UV LEDs and high-power RF switches.
Implementation Method 1
one or more epitaxial oxide layers formed on a compatible substrate with in-plane lattice parameters and atomic positions that provide a suitable template for the growth of the epitaxial oxide materials
Implementation Method 2
one or more of the epitaxial oxide materials is strained
Data Source
AI summary
The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, an integrated circuit includes a field effect transistor (FET) and a waveguide coupled to the FET, wherein the waveguide comprises a signal conductor. The FET can include: a substrate comprising a first oxide material; an epitaxial semiconductor layer on the substrate, the epitaxial semiconductor layer comprising a second oxide material with a first bandgap; a gate layer on the epitaxial semiconductor layer, the gate layer comprising a third oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap; and electrical contacts. The electrical contacts can include: a source electrical contact coupled to the epitaxial semiconductor layer; a drain electrical contact coupled to the epitaxial semiconductor layer; and a first gate electrical contact coupled to the gate layer.