Epitaxial Oxide Transistor Heterostructure for High Breakdown Voltage
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Solution Overview
Problem
Existing semiconductor devices, such as UV LEDs and RF switches, face challenges in handling high voltages and achieving efficient optical wavelength conversion due to limitations in bandgap materials, leading to the need for multiple devices in series and complex impedance matching.
Innovation Solution
The use of epitaxial oxide materials with varying compositions, crystal symmetries, and bandgaps, forming structures like superlattices and heterostructures, to create semiconductor devices with high breakdown voltages and efficient carrier multiplication mechanisms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If low bandgap semiconductors (e.g., Si or GaAs) are used in transistor devices, then the devices can be manufactured with existing technology, but the breakdown voltage is limited to below about 3 V requiring many devices in series
Solution Approach 1:
The patent changes the fundamental material parameter (bandgap) from conventional semiconductors to wide bandgap semiconductors, enabling single-device high voltage operation instead of requiring multiple series-connected low-voltage devices
Solution Approach 2:
The patent employs composite material structures including heterostructures and superlattices combining different wide bandgap semiconductor materials (e.g., GaN, AlN, SiC) to achieve both high breakdown voltage and controlled electrical properties for RF switch applications
2Reliability
If wider bandgap semiconductors (e.g., GaN) are used to improve maximum voltage limit, then fewer transistor devices are needed, but the impedance matching with microwave circuits becomes more difficult
Solution Approach 1:
The patent applies local quality by creating regions with different material compositions and electrical properties within the device structure, including doped and undoped regions, to simultaneously achieve high voltage capability and proper impedance characteristics for microwave circuit integration
Solution Approach 2:
The patent modifies electrical parameters through controlled doping and heterostructure design to adjust impedance characteristics while maintaining high breakdown voltage, enabling better matching with standard 50-ohm microwave circuits
3Reliability
If multiple devices are connected in series to handle high voltages, then the required voltage rating is achieved, but the device complexity and impedance matching requirements increase
Solution Approach 1:
The patent merges multiple functions into a single device structure, combining high voltage blocking capability with RF signal switching functionality in one transistor device, eliminating the need for series connections of multiple simpler devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These structures enable semiconductor devices with improved breakdown voltage and efficient optical emission, reducing the number of devices needed and simplifying impedance matching, while maintaining high electrical conversion efficiency.
Implementation Method 1
epitaxial oxide materials with varying compositions, crystal symmetries, and bandgaps, forming structures like superlattices and heterostructures, to create semiconductor devices with high breakdown voltages and efficient carrier multiplication mechanisms
Implementation Method 2
a first epitaxial oxide layer comprising (Nix1Mgy1Zn1-x1-y1)(Alq1Ga1-q1)2O4
Data Source
AI summary
The techniques described herein relate to a transistor including a single crystal substrate, an epitaxial channel layer (ECL) on the single crystal substrate, a gate layer on the ECL, a source electrical contact coupled to the ECL, a drain electrical contact coupled to the ECL, and a gate electrical contact coupled to the gate layer. The substrate includes a substrate material with a first crystal symmetry and the ECL includes an ECL oxide material with a second crystal symmetry, where the first crystal symmetry is different from the second crystal symmetry. The gate layer includes a gate oxide material, where the ECL oxide material has a first bandgap and the gate oxide material has a second bandgap, and the second bandgap is wider than the first bandgap.