Epitaxial Oxide Layer via RF Magnetron Sputtering
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Solution Overview
Problem
Existing methods for manufacturing laminated substrates for epitaxial growth do not effectively improve the crystal orientation of the oxide layer, which is crucial for enhancing the superconducting properties of superconducting wires and other applications.
Innovation Solution
Forming an oxide layer on a metal substrate using RF magnetron sputtering, with precise adjustment of the target position and angle to ensure optimal crystal orientation, resulting in improved Δϕ and Δω values and reduced crystal direction deviations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional sputtering methods are used to form an oxide layer on a metal substrate, then the oxide layer can be formed, but the crystal orientation of the oxide layer is not significantly improved compared to the metal substrate
Solution Approach 1:
The patent changes the geometric parameters of the sputtering system, specifically setting the angle between the substrate surface and the line connecting the substrate center to the target center to 45 degrees, and positioning the substrate at a specific distance from the target. These parameter changes enable the oxide layer to inherit and amplify the crystal orientation of the metal substrate, achieving Δφ≤5 degrees and Δω≤6 degrees without complex additional processing steps.
2Manufacturing precision
If the crystal orientation of the metal substrate outermost layer is improved, then the substrate is suitable for epitaxial growth, but the oxide layer crystal orientation does not automatically improve
Solution Approach 1:
The patent performs preliminary preparation of the metal substrate with high crystal orientation (c-axis orientation rate≥99%) before forming the oxide layer. By combining this preliminary substrate preparation with the specific 45-degree sputtering geometry, the oxide layer inherits and enhances the orientation, ensuring reliable epitaxial growth capability for subsequent superconducting layer formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a significant improvement in the crystal orientation of the oxide layer, with Δϕ and Δω values enhanced by 0.5 degrees or more and 1.2 degrees or more respectively, and reduces the area with significant crystal direction deviations, leading to a laminated substrate with excellent epitaxial growth capabilities.
Implementation Method 1
a method for forming an oxide layer, which comprises performing RF magnetron sputtering
Implementation Method 2
a magnet is provided on a back surface of the target
Data Source
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AI summary
This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substrate 20 via RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrate 20 exhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle α formed by a perpendicular at a film formation position 20a on the metal substrate 20 and a line from the film formation position 20a to a point 10a at which the perpendicular magnetic flux density is zero on the target 10 located at the position nearest to the film formation position 20a to 15 degrees or less.