Epitaxial Substrate Reference Marks With Growth Suppression Film
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Solution Overview
Problem
The visibility of reference marks on semiconductor substrates and epitaxial substrates is deteriorated due to the growth of epitaxial layers, making it difficult to accurately associate defect positions with element coordinates.
Innovation Solution
A semiconductor substrate and epitaxial substrate are designed with a recessed reference mark and an epitaxial growth suppression film composed of a material different from the semiconductor material, which is provided inside the recess to inhibit epitaxial growth, maintaining the visibility of the reference mark.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an epitaxial layer is grown on the semiconductor substrate, then the semiconductor device functionality is improved, but the visibility of reference marks is deteriorated
Solution Approach 1:
The substrate surface is segmented into functional regions (epitaxial growth regions) and reference regions (with reference marks). By spatially separating these functions, the epitaxial layer is grown only in specific areas while reference marks remain in regions where epitaxial growth is suppressed, maintaining their visibility for coordinate measurement.
Solution Approach 2:
Different regions of the substrate are given different properties: regions with reference marks have epitaxial growth suppression characteristics (through different crystal orientation, material composition, or surface treatment) while other regions have normal epitaxial growth properties. This local differentiation allows simultaneous achievement of device functionality and reference mark visibility.
2Measurement precision
If the reference mark is formed by a recess in the main surface, then the coordinate reference is established, but the epitaxial growth fills the recess and obscures the reference mark
Solution Approach 1:
Epitaxial growth suppression is applied in advance to the regions containing reference marks before the epitaxial layer formation process. This preliminary anti-action prevents the epitaxial material from filling the reference mark recesses, ensuring that the reference marks remain visible and maintain their coordinate reference function throughout the device fabrication process.
3Area of stationary object
If the entire substrate surface is used for epitaxial growth, then the device area is maximized, but the reference marks become invisible
Solution Approach 1:
The substrate surface is divided into epitaxial growth regions (for device fabrication) and reference mark regions (where epitaxial growth is suppressed). This segmentation allows the majority of the substrate area to be utilized for devices while preserving specific areas for visible reference marks, achieving a balance between device area maximization and measurement capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses the deterioration of reference mark visibility, allowing for accurate association of defect positions with element coordinates, enhancing the precision of defect identification and element classification.
Implementation Method 1
an epitaxial growth suppression film provided inside the recess and having a function of suppressing epitaxial growth
Data Source
AI summary
A semiconductor substrate has a main surface, a reference mark, and an epitaxial growth suppression film. The reference mark is constituted of a recess formed in the main surface and serves as a reference for an in-plane coordinate. The epitaxial growth suppression film is provided in at least part of inside of the recess. The reference mark has at least two or more reference marks provided in the main surface. The main surface is composed of a semiconductor material. The epitaxial growth suppression film is composed of a material different from the semiconductor material.