Epitaxial Resistor Patterns for Uniform Resistance in Semiconductor Devices
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Solution Overview
Problem
Conventional resistors in semiconductor devices often have non-uniform resistance values due to variations in the length and growth of the epitaxial resistance layer, leading to inconsistent performance and potential contact failures with electrodes.
Innovation Solution
A resistor design featuring a resistance layer with alternately arranged convex and depressed portions, grown epitaxially from active regions using a fin field effect transistor process, ensuring uniform resistance values and stable electrode contact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the length of the resistor is increased to satisfy desired resistance magnitude, then the resistance value increases, but the uniformity of resistance value deteriorates due to variations in epitaxial layer growth
Solution Approach 1:
The resistance layer is divided into multiple resistance patterns arranged in parallel, where each pattern is formed through controlled epitaxial growth from separate active regions. This segmentation allows each individual pattern to maintain uniform growth characteristics while the collective arrangement achieves the desired total resistance value, resolving the contradiction between achieving sufficient resistance magnitude and maintaining uniformity.
2Manufacturing precision
If the epitaxial resistance layer is grown to sufficient length to ensure uniform resistance, then the manufacturing complexity increases due to additional process steps
Solution Approach 1:
The formation of resistance patterns is merged with the existing fin field effect transistor fabrication process. The same epitaxial growth steps used to create source/drain regions for transistors are simultaneously used to form the resistance patterns, eliminating the need for separate resistance formation processes and reducing overall manufacturing complexity while ensuring uniform growth.
Solution Approach 2:
The epitaxial growth process serves multiple functions: it forms both the active regions for transistor operation and the resistance patterns for resistive elements. This multi-functionality allows uniform resistance layers to be created without adding dedicated process steps, as the resistance formation is accomplished through the universal epitaxial growth process already required for transistor fabrication.
3Reliability
If the resistance layer is formed to ensure sufficient growth for uniform resistance, then the contact stability with electrodes improves, but the device area increases
Solution Approach 1:
The resistance patterns utilize the vertical dimension by growing epitaxial layers that protrude from the substrate surface, rather than only expanding in the planar area. This vertical growth allows sufficient epitaxial layer thickness for uniform resistance and stable electrode contact while minimizing the horizontal device area, as the resistance is achieved through the three-dimensional structure rather than large planar dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves a consistently uniform resistance value and improved contact stability, enhancing the reliability of semiconductor devices by ensuring the resistance layer is sufficiently grown and uniformly formed.
Implementation Method 1
the resistance layer may include an epitaxial layer grown from the active regions by an epitaxial growth method
Data Source
AI summary
Embodiments of the inventive concepts provide a resistor and a semiconductor device including the same. The resistor includes a substrate, a device isolation layer in the substrate which defines active regions arranged in a first direction a resistance layer including resistance patterns that vertically protrude from the active regions and are connected to each other in the first direction, and contact electrodes on the resistance layer.