Epitaxial Silicon Film Growth at Low Temperature
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Solution Overview
Problem
Conventional methods for growing silicon epitaxial films at high temperatures (750° C. to 850° C.) for finer patterning and higher performance MOSFETs result in thermal damage and increased thermal budget, inhibiting higher performance device production and lowering yield.
Innovation Solution
A manufacturing method for semiconductor apparatuses that selectively grows epitaxial films at a silicon surface by using a substrate processing apparatus to heat the processing chamber to a lower temperature, employing a cycle of silicon-containing gas, hydrogen gas, chlorine gas, and hydrogen gas supply and exhaust steps, allowing for the omission of inert gas purging and enhancing processing uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high temperature processing (750°C to 850°C) is used for growing silicon epitaxial films, then finer patterning and higher performance MOSFET can be achieved, but thermal damage and thermal budget increase, lowering yield and device performance
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperature (750-850°C) to low temperature (500-700°C) processing. This parameter change enables finer patterning while avoiding thermal damage and excessive thermal budget accumulation, thereby resolving the contradiction between manufacturing precision and harmful thermal effects
Solution Approach 2:
The patent utilizes phase transition of silicon from amorphous to crystalline state through low-temperature epitaxial growth. By controlling the phase transition process at lower temperatures using specific gas compositions and cyclic supply methods, the patent achieves fine patterning without the thermal damage associated with conventional high-temperature processing
2Ease of manufacture
If conventional continuous gas supply method is used for epitaxial growth, then simple processing is maintained, but processing uniformity deteriorates and inert gas purging steps are required
Solution Approach 1:
The patent employs periodic action by cyclically supplying different gases (silicon-containing gas and chlorine gas alternately with hydrogen gas) instead of continuous supply. This periodic gas supply method improves processing uniformity by controlling reaction conditions in distinct phases while maintaining operational simplicity through automated cyclic control
Solution Approach 2:
The patent achieves continuous useful action by eliminating the inert gas purging step traditionally required between processing stages. The direct transition from silicon-containing gas supply to chlorine gas supply without intermediate purging maintains continuous productive processing while improving uniformity through the controlled cyclic gas supply method
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of high-quality films at lower temperatures, improving device performance and yield while reducing thermal damage, and simplifying the processing steps by omitting inert gas purging, thus enhancing throughput and uniformity.
Implementation Method 1
by using a substrate processing apparatus for heating an atmosphere of the inside of the processing chamber and the substrate to a predetermined temperature by a heating unit installed outside
Implementation Method 2
a first supply step for supplying silicon-containing gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least the silicon-containing gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber
Data Source
AI summary
The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the predetermined temperature; and a gas supply and exhaust step for supplying and exhausting desired gas into and from the processing chamber, wherein the gas supply and exhaust step repeats by the predetermined times a first supply step for supplying silicon-type gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least said silicon-type gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber; and a second exhaust step for exhausting at least the chlorine gas from the processing chamber.