Epitaxial Structure Formation Angled SPM Cleaning
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Solution Overview
Problem
Conventional semiconductor manufacturing processes are inefficient in removing particles and residues, leading to defects and reduced product yields and performances.
Innovation Solution
A method involving a Sulfuric Peroxide Mixture (SPM) cleaning process with a nozzle spray angle greater than zero and less than 45 degrees, combined with a swinging nozzle, is used to enhance particle and residue removal, followed by a wet etch and pre-epi cleaning process to form epitaxial structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional cleaning process is used, then the manufacturing process is simple, but particles and residues are not effectively removed leading to defects and reduced product yields
Solution Approach 1:
The patent changes the cleaning parameters by using SPM solution with a specific spraying angle (greater than zero and less than 45 degrees) and implementing a swinging nozzle motion, transforming the conventional vertical spray cleaning into an angled swinging spray cleaning process that significantly improves particle and residue removal efficiency
Solution Approach 2:
The patent introduces dynamic motion to the cleaning process by making the nozzle swing back and forth during spraying, creating a dynamic cleaning action that enhances the removal of particles and residues compared to static conventional cleaning methods
2Reliability
If a conventional vertical spray cleaning is used, then the process is simple, but the particle removal efficiency is insufficient
Solution Approach 1:
The nozzle is designed to swing back and forth during the cleaning process, creating a dynamic spraying pattern that covers a wider area and improves cleaning effectiveness without requiring multiple nozzles or complex multi-step processes
Solution Approach 2:
The patent introduces a new dimension to the cleaning process by spraying at an angle greater than zero and less than 45 degrees relative to the substrate surface, rather than the conventional vertical (90 degree) spray, creating a lateral cleaning action that is more effective at removing particles
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the efficiency of particle and residue removal, enhancing the formation of epitaxial structures and resulting in better product yield and performance.
Implementation Method 1
SPM solution has weak etching ability to nitride
Implementation Method 2
an acute spraying angle and swinging nozzle provides physical forces for removal of particles directed from lateral sides of particles/residues
Data Source
AI summary
The invention provides a method of epitaxial structure formation in a semiconductor, comprising: providing a substrate; performing a dry etch to form a first recess; after performing the dry etch, performing a SPM cleaning process on the substrate by using a nozzle spraying SPM solution with an angle greater than zero and less than 45 degrees relative to the substrate; after performing the SPM cleaning process, performing a wet etch to form a second recess; after performing the wet etch, performing a pre-epi cleaning process; and growing an epitaxial structure in the second recess.