Epitaxial Thin Silicon Solar Cell Fabrication

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Solution Overview

Problem

The high cost and complexity of traditional silicon wafer creation steps in solar cell manufacturing hinder the competitiveness of solar cells with other energy sources, necessitating a more efficient and cost-effective fabrication process.

Innovation Solution

The method involves forming a sacrificial layer on a silicon substrate, growing a doped silicon layer and a silicon film epitaxially, creating interdigitated contacts, and removing the sacrificial layer to detach the solar cell, thereby eliminating the need for traditional wafer creation steps and reducing fabrication costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional silicon wafer creation steps are used, then solar cells can be fabricated with established processes, but the cost and complexity of fabrication increase significantly

Engineering Contradiction:
Improvefabrication process reliabilityVSAvoidfabrication process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the complex traditional wafer creation steps (ingot formation, wafering) from the solar cell fabrication process. Instead, silicon layers are grown directly on a substrate using epitaxial growth, removing the unnecessary intermediate steps while maintaining product quality

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The fabrication process is segmented into distinct functional layers grown epitaxially: a sacrificial layer for release, a textured silicon layer for light capture, and a thin silicon film for photovoltaic function. This segmentation allows each layer to be optimized independently and simplifies the overall process

Inventive Principle:
Principle #1Segmentation

2Quantity of substance

If traditional wafer creation steps are used, then solar cells can be manufactured, but the fabrication cost increases

Engineering Contradiction:
Improvesilicon material usageVSAvoidfabrication cost
Core Design Contradiction:
Quantity of substanceVSEase of manufacture

Solution Approach 1:

The patent uses a thin silicon film grown epitaxially on a substrate instead of traditional thick silicon wafers. This thin film approach reduces silicon material consumption significantly while maintaining solar cell functionality, directly lowering material costs

Inventive Principle:
Principle #30Flexible shells and thin films

Solution Approach 2:

The substrate is prepared in advance with a textured surface pattern before silicon layer growth. This preliminary texturing enables improved light capture without requiring additional processing steps after wafer fabrication, reducing overall manufacturing complexity and cost

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the cost-effective fabrication of thin silicon solar cells with improved light capture due to textured surfaces, enhancing efficiency and reducing the expense associated with traditional wafer processing.

Implementation Method 1

removing the sacrificial layer

Methodology Applied
Scientific EffectSacrificial layer removal:

Implementation Method 2

processing the exposed surface of the sacrificial layer to form a textured surface

Methodology Applied
Scientific EffectLight scattering: Scattering

Implementation Method 3

epitaxially growing a silicon film atop the lesser doped silicon layer

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Data Source

PatentUS8822257B2Thin silicon solar cell and method of manufacture
Publication Date: 2014.09.02 MAXEON SOLAR PTE LTD
  • US8822257B2 patent drawing
  • US8822257B2 patent drawing
  • US8822257B2 patent drawing

AI summary

A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer.