Epitaxial Wafer Defect Control via Temperature Regulation
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Solution Overview
Problem
The existing methods for fabricating semiconductor wafers are complicated and costly due to the formation of crystal defects and non-uniformity in metal electrode deposition, leading to reduced crystallinity and increased leakage current in semiconductor devices.
Innovation Solution
A method of growing an epitaxial layer on a wafer surface by controlling defects through a controlled temperature process, including alternating steps at different temperatures to regulate growth rate and buffer stress, thereby reducing dislocation density and surface roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a buffer layer is formed to reduce dislocation defects, then the crystallinity of the semiconductor layer is improved, but the fabrication process becomes complicated and costs increase
Solution Approach 1:
The invention extracts and eliminates the need for separate buffer layer formation processes by directly controlling and reducing dislocation defects at the substrate level during epitaxial growth. This removes the buffer layer step from the fabrication process while maintaining improved crystallinity.
Solution Approach 2:
The invention performs preliminary defect control by treating the substrate surface and controlling growth conditions before the main epitaxial layer formation. This preliminary action prevents dislocation propagation from the substrate, eliminating the need for subsequent buffer layer processes.
2Manufacturing precision
If additional processes are performed to form a buffer layer, then dislocation defects are reduced, but fabrication cost increases
Solution Approach 1:
The invention extracts and eliminates the need for separate buffer layer formation processes by directly controlling and reducing dislocation defects at the substrate level during epitaxial growth. This removes the buffer layer step from the fabrication process while maintaining improved crystallinity.
Solution Approach 2:
The invention enables the epitaxial growth process to self-correct dislocation defects through controlled growth conditions and temperature management, eliminating the need for additional buffer layer processes and reducing fabrication costs.
3Ease of manufacture
If conventional epitaxial growth is performed without defect control, then the fabrication process is simple, but crystal defects and non-uniformity increase
Solution Approach 1:
The invention changes key growth parameters including temperature control and growth rate management during epitaxial growth. These parameter adjustments enable defect control and improved uniformity while maintaining a relatively simple single-step growth process.
Solution Approach 2:
The invention employs periodic changes in growth conditions, such as alternating growth and annealing stages with controlled temperature variations. This periodic action allows defect control and stress management during the epitaxial growth process without requiring additional separate processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication process, reduces costs, enhances the performance of the epitaxial layer, and improves the yield rate of semiconductor devices by minimizing defects and stress in the epitaxial layer.
Implementation Method 1
growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer
Implementation Method 2
by regulating a process temperature, a change in growth rate in the same growth condition can be finely regulated, and a path of a defect on a surface of the wafer can be changed
Implementation Method 3
stress in the epitaxial layer can be attenuated and a defect present on a surface of the wafer can be prevented from being transited to the epitaxial layer through the step of controlling the defect
Data Source
AI summary
Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including: a substrate; and an epitaxial layer located on the substrate, wherein a basal dislocation density of the epitaxial layer is equal to or less than 1/cm2.