Epitaxial X-ray Detector Bonded to Electronics Layer

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Solution Overview

Problem

Current semiconductor X-ray detectors face challenges in heat management, making it difficult to produce large-area detectors with a large number of pixels, and scintillators trade off spatial resolution for absorption efficiency.

Innovation Solution

The development of an X-ray detector comprising an epitaxial layer with a p-n or p-i-n junction, bonded to an electronics layer with a scintillator layer, which includes porous silicon, and a common electrode, allowing for efficient detection of X-ray fluorescence through electrical signals generated in the epitaxial layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If scintillator thickness is increased to improve absorption efficiency, then absorption efficiency is improved, but spatial resolution deteriorates

Engineering Contradiction:
Improveabsorption efficiencyVSAvoidspatial resolution
Core Design Contradiction:
Quantity of substanceVSMeasurement precision

Solution Approach 1:

The patent introduces an X-ray absorbing layer with high atomic number material (e.g., cadmium telluride, mercury iodide) as an intermediary between the X-ray source and scintillator. This layer pre-absorbs X-rays and converts them to visible light, reducing the X-ray flux reaching the scintillator. Consequently, the scintillator can be made thinner to maintain spatial resolution while still achieving high overall absorption efficiency through the combined action of the X-ray absorbing layer and scintillator.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If semiconductor detector area and pixel number are increased, then detection capability is improved, but heat management becomes difficult

Engineering Contradiction:
Improvedetection capabilityVSAvoidheat management
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent divides the detector into multiple independent pixel regions with individual readout circuits. Each pixel or small group of pixels has its own signal processing capability, allowing for localized heat dissipation and reduced thermal interference between adjacent detection elements. This segmentation enables large-area detectors with high pixel counts while maintaining manageable thermal characteristics through distributed heat management.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables effective detection of X-ray fluorescence with improved spatial resolution and absorption efficiency, overcoming the heat management issues in semiconductor detectors and scintillator limitations.

Implementation Method 1

When an X-ray photon is absorbed in the semiconductor layer, multiple charge carriers (e.g., electrons and holes) are generated

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

multiple charge carriers (e.g., electrons and holes) are generated and swept under an electric field towards electrical contacts on the semiconductor layer

Methodology Applied
Scientific EffectElectric field: Electric Field

Implementation Method 3

scintillators (e.g., sodium iodide) absorb X-ray and emit visible light

Methodology Applied
Scientific EffectScintillation: Scintillation

Implementation Method 4

bonded to an electronics layer with a scintillator layer, which includes porous silicon

Methodology Applied
Scientific EffectPorosity: Porosity

Data Source

PatentUS11735621B2X-ray detectors based on an epitaxial layer and methods of making
Publication Date: 2023.08.22 SHENZHEN XPECTVISION TECH CO LTD
  • US11735621B2 patent drawing
  • US11735621B2 patent drawing
  • US11735621B2 patent drawing

AI summary

Disclosed herein is a method comprising: forming electrical contacts on a first surface of an epitaxial layer supported on a substrate, the first surface being opposite from the substrate; bonding the epitaxial layer to an electronics layer, wherein the first surface faces the electronics layer and the electrical contacts on the first surface are bonded to electrical contacts of the electronics layer; exposing a second surface opposite the first surface by removing the substrate; and forming a common electrode on the second surface.