Epitaxy Base Ring Assembly for Uniform Gas Flow
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Solution Overview
Problem
Conventional epitaxy chambers suffer from non-uniform flow, turbulence, and long stabilization times due to their tall design, which affects the uniformity of deposition gas concentration and film quality on semiconductor substrates.
Innovation Solution
A base ring assembly with a ring body, upper ring, and lower ring configuration that are concentric or coaxial, featuring a loading port, gas inlet, and gas outlet, designed to improve flow uniformity by reducing chamber volume and minimizing turbulence, allowing for more efficient deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of stationary object
If a tall chamber design is used, then the chamber volume is large, but the flow uniformity deteriorates and turbulence increases
Solution Approach 1:
The base ring is divided into an upper ring and a lower ring that are disposed at different heights relative to the substrate. This segmentation allows each ring to independently control gas flow in different regions, creating a more uniform overall flow pattern while maintaining a compact chamber volume.
Solution Approach 2:
The invention transitions from a single-plane gas distribution approach to a multi-height configuration where gas is introduced at both upper and lower levels. This dimensional change in gas injection strategy enables better flow control and uniformity without requiring a tall chamber design.
2Device complexity
If a tall chamber design is used, then the chamber structure is simple, but the stabilization time increases
Solution Approach 1:
The base ring is divided into an upper ring and a lower ring that are disposed at different heights relative to the substrate. This segmentation allows each ring to independently control gas flow in different regions, creating a more uniform overall flow pattern while maintaining a compact chamber volume.
Solution Approach 2:
The system enables dynamic control of gas flow patterns by independently adjusting flow rates through the upper and lower rings. This dynamic capability allows rapid stabilization of flow conditions when transitioning between different process modes, reducing stabilization time.
3Adaptability or versatility
If a tall chamber design is used, then the chamber can accommodate standard components, but the deposition uniformity deteriorates
Solution Approach 1:
The base ring is divided into an upper ring and a lower ring that are disposed at different heights relative to the substrate. This segmentation allows each ring to independently control gas flow in different regions, creating a more uniform overall flow pattern while maintaining a compact chamber volume.
Solution Approach 2:
Different regions of the chamber receive optimized gas flow characteristics through the upper and lower rings. The upper ring addresses flow conditions above the substrate while the lower ring addresses flow conditions below the substrate, ensuring locally optimized conditions throughout the chamber for uniform deposition.
Data Source
AI summary
Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.