Epitaxy Chamber with Central Opening and Magnetic Rotation
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Solution Overview
Problem
The epitaxy process in semiconductor manufacturing is slow, requiring about an hour to process a 300 mm substrate, which limits throughput in advanced manufacturing facilities.
Innovation Solution
A processing chamber design with a substrate support having a central opening and multiple substrate locations, a gas distributor with passages around its circumference, and an energy source coupled to the top or bottom, along with a magnetic rotator and air bearing for substrate rotation, to enhance uniform gas flow and energy distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional epitaxy process is used to grow silicon layers on substrates, then the crystal structure quality is maintained, but the processing time is excessively long (about an hour per 300 mm substrate)
Solution Approach 1:
The processing chamber is divided into multiple substrate locations (e.g., 9 positions) arranged in a circular pattern around a central opening. Multiple substrates can be processed simultaneously in parallel, increasing throughput while maintaining individual substrate quality through localized gas flow and energy distribution.
Solution Approach 2:
The patent transitions from processing a single substrate in a linear manner to processing multiple substrates arranged in a two-dimensional circular array. This spatial reconfiguration enables parallel processing of multiple substrates simultaneously, dramatically increasing productivity while maintaining process quality through uniform distribution of processing conditions across all positions.
2Productivity
If the substrate support is designed with multiple substrate locations to increase throughput, then productivity is improved, but the uniformity of gas flow and energy distribution becomes more difficult to achieve
Solution Approach 1:
The gas distributor is designed with multiple independent gas inlets positioned around the circular array, allowing each substrate location to receive independently controlled gas flow. This enables localized optimization of gas distribution to ensure uniform processing conditions at each position while maintaining high throughput through parallel processing.
Solution Approach 2:
The substrate support features a central opening that breaks the complete circular symmetry, creating an asymmetric flow path for gases and energy. This asymmetric design, combined with strategically positioned gas inlets and exhaust ports, optimizes gas flow distribution across the multiple substrate locations to ensure uniform exposure while maintaining high productivity.
3Manufacturing precision
If a magnetic rotator and air bearing are used to rotate the substrate support, then gas flow uniformity and energy distribution are improved, but the device complexity increases
Solution Approach 1:
The patent replaces traditional mechanical rotation systems with a magnetic field-based rotation mechanism. A magnetic rotor with permanent magnets interacts with a magnetic stator to rotate the substrate support without mechanical contact. This eliminates the need for mechanical bearings and drive mechanisms, reducing complexity while enabling precise, uniform rotation for improved gas flow and energy distribution.
Solution Approach 2:
An air bearing system is introduced to support the rotating substrate support, using a thin film of gas to provide frictionless bearing support. This pneumatic bearing eliminates mechanical contact and friction, enabling smooth, uniform rotation while reducing mechanical complexity compared to traditional bearing systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design increases the throughput of the epitaxy process by ensuring uniform gas exposure and efficient energy delivery to the substrate, potentially reducing processing time and improving the efficiency of semiconductor production.
Implementation Method 1
an annular air bearing disposed on the annular enclosure
Implementation Method 2
The substrate support may be rotated using a magnetic rotator and an air bearing
Implementation Method 3
The energy source may be a radiant source, a thermal source, a UV source, or a plasma source
Implementation Method 4
The energy source may be a radiant source, a thermal source, a UV source, or a plasma source
Implementation Method 5
a gas distributor around the sidewall... The gas distributor may have a plurality of passages distributed around a circumference of the gas distributor
Data Source
AI summary
Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define an enclosure, a gas distributor around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central opening and a plurality of substrate locations distributed around the central opening, a pumping port below the substrate support, and an energy source coupled to the top or the bottom. The energy source may be a radiant source, a thermal source, a UV source, or a plasma source. The substrate support may be rotated using a magnetic rotator and an air bearing. The gas distributor may have a plurality of passages distributed around a circumference of the gas distributor.