Integrated Epitaxy Preclean Chamber for Oxide-Free Wafer Transfer
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Solution Overview
Problem
The challenge is to minimize substrate handling time and exposure to ambient environment during the cleaning of semiconductor substrates before epitaxial deposition, as existing pre-clean processes often increase handling time and risk of contamination.
Innovation Solution
A processing system comprising a transfer chamber, a plasma oxide removal chamber with a remote plasma source, and a load lock chamber, utilizing a plasma process with gases like NH3 and HF to remove oxides and contaminants, and a vapor phase epitaxy process to form films, while minimizing exposure to ambient conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If pre-clean processes are carried out in stand-alone vacuum process chambers, then oxide removal and contaminant elimination are achieved, but substrate handling time increases and exposure to ambient environment increases
Solution Approach 1:
The patent combines the pre-clean chamber and epitaxial growth chamber into a single integrated vacuum system. The pre-clean chamber includes a substrate support with a first surface for oxide removal using plasma and chemical reactions, while the epitaxial growth chamber has a substrate support with a second surface for film deposition. Both processes occur in the same vacuum system, eliminating the need to transfer substrates between separate chambers and thus reducing handling time and ambient exposure while maintaining surface cleanliness.
2Reliability
If pre-clean processes are carried out in stand-alone vacuum process chambers, then oxide removal is achieved, but chances of exposing substrates to ambient environment increase
Solution Approach 1:
The patent merges the pre-clean and epitaxial growth operations into one integrated vacuum system. Substrates are cleaned on a first substrate support within the pre-clean chamber, then transferred via a transfer mechanism to a second substrate support in the epitaxial growth chamber, all without breaking vacuum. This eliminates repeated exposure to ambient environment that would occur with stand-alone chambers, thereby protecting substrate surface quality while achieving effective oxide removal.
3Productivity
If integrated epitaxy and preclean system is used, then substrate handling time is reduced and ambient exposure is minimized, but system complexity increases
Solution Approach 1:
The patent divides the integrated system into distinct functional zones: a pre-clean chamber with plasma generation means and substrate support, an epitaxial growth chamber with its own substrate support, and a transfer mechanism connecting them. Each zone is optimized for its specific function, allowing complex processes to be managed through modular segmentation rather than a monolithic design, thus improving productivity while controlling system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces substrate handling time and exposure to ambient environments, improving the quality of epitaxial layers by ensuring a clean and contaminant-free substrate surface, thereby enhancing the quality of subsequently formed epitaxial layers.
Implementation Method 1
a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a remote plasma source
Implementation Method 2
exposing the substrate to a processing gas comprising NH3, HF, and radicals
Implementation Method 3
forming a film on the substrate by a vapor phase epitaxy process
Implementation Method 4
forming a film on the substrate by a vapor phase epitaxy process
Implementation Method 5
a substrate support comprising a cooling channel and a heater
Implementation Method 6
a substrate support comprising a cooling channel and a heater
Data Source
AI summary
Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.