Liquid Epoxy Resin Crystallization Control via Oligomer Distribution
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Solution Overview
Problem
Liquid epoxy resins exhibit a high tendency to crystallize at lower temperatures, posing handling issues and requiring costly solutions that often compromise performance or increase storage requirements.
Innovation Solution
Modifying the oligomeric distribution of liquid epoxy resins to contain a lower n=0 oligomer content and a higher (>n=0) oligomer content, disrupting crystallization and reducing the crystallization tendency while maintaining mechanical performance and cost-effectiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If liquid epoxy resin is stored at high temperatures (55-75°C) to prevent crystallization, then crystallization resistance is improved, but color develops and performance deteriorates
Solution Approach 1:
The patent modifies the oligomeric distribution parameters of the epoxy resin by controlling the ratio of n=0 to n>0 oligomers. This chemical composition parameter change allows the resin to maintain reduced crystallization tendency without requiring high temperature storage, thereby avoiding color development while preserving crystallization resistance.
Solution Approach 2:
Instead of using high temperature storage to prevent crystallization (conventional approach), the patent inverts the approach by modifying the oligomeric distribution to inherently reduce crystallization tendency. This allows storage at ambient temperatures while maintaining crystallization resistance, eliminating the harmful effect of color development.
2Ease of manufacture
If conventional liquid epoxy resin is stored at ambient temperature, then storage cost is reduced, but crystallization occurs causing handling problems
Solution Approach 1:
The patent changes the oligomeric distribution parameters (reducing n=0 oligomer content and increasing n>0 oligomer content) to enable ambient temperature storage without crystallization. This parameter modification allows the resin to be stored at ambient temperature (reducing storage cost) while maintaining handling ease by preventing crystallization.
3Reliability
If diluents or other epoxy resins are blended to reduce crystallization tendency, then crystallization resistance is improved, but cost increases and performance may deteriorate
Solution Approach 1:
The patent achieves improved crystallization resistance by modifying the oligomeric distribution parameters of the base epoxy resin itself, rather than blending with diluents or other epoxy resins. This intrinsic parameter change avoids the additional cost and potential performance degradation associated with blending approaches.
Solution Approach 2:
The patent uses a cost-effective approach by modifying the oligomeric distribution through controlled synthesis rather than adding expensive diluents or blend components. This achieves the desired crystallization resistance without the additional material costs and performance compromises of blending strategies.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modified oligomeric distribution significantly reduces crystallization tendency, allowing for stable use in coatings, adhesives, and composites applications without sacrificing performance or increasing costs, with improved crystallization resistance and viscosity retention.
Implementation Method 1
these LERs exhibit a high tendency to crystallize at lower temperatures of about 0° C. to ambient temperature (about 25° C.). Crystallization poses a handling problem for some customers using the LERs.
Data Source
AI summary
A liquid epoxy resin composition having a reduced tendency to crystallize including at least one liquid epoxy resin having the following generic chemical Structure (I): where n is 0 or an integer of 1 or more; and wherein n=0 is in the range of between about 1 wt % and about 90 wt %; wherein; n=1 is in the range of between about 7 wt % and about 20 wt %; n=2 is in the range of between about 0.8 wt % and about 3 wt %; and n=3 and above is in the range of about 0 wt % and about 2 wt %.