Er-Implanted SiN PIC Laser for Narrow Linewidth on Chip
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Solution Overview
Problem
Existing Erbium-doped fiber lasers face challenges in achieving narrow linewidth, low-noise, and compact form factor due to the difficulty in integrating long and low-loss active waveguides, which are essential for single-frequency operation and sufficient round-trip gain, limiting their integration on chip-based photonic integrated circuits.
Innovation Solution
A hybrid integrated photonic integrated circuit laser is developed using meter-scale-long Erbium-implanted silicon nitride (Er:Si3N4) photonic integrated circuits, incorporating a pump laser diode for electromagnetic radiation, and a microring-based Vernier filter for wavelength tunability, achieving narrow linewidth and high power operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If Erbium-doped fiber lasers are used to achieve narrow linewidth and low noise, then laser coherence and noise performance are improved, but device size and susceptibility to vibrations worsen
Solution Approach 1:
The patent replaces the mechanical fiber optic system with a photonic integrated circuit on a chip substrate. The fiber laser's flexible optical fiber components are substituted with rigid waveguides fabricated on a semiconductor chip, eliminating the mechanical flexibility that causes vibration susceptibility while maintaining optical performance through integrated photonic structures.
Solution Approach 2:
The patent combines multiple fiber laser components (gain medium, waveguide, mirrors, and pumping mechanisms) into a single integrated photonic chip. This merging of previously separate fiber-optic components into one compact integrated device achieves both size reduction and improved mechanical stability while preserving the narrow linewidth characteristics.
2Measurement precision
If Erbium-doped fiber lasers are used to achieve narrow linewidth and low noise, then laser coherence and noise performance are improved, but manufacturing cost worsens
Solution Approach 1:
The patent replaces expensive, manually assembled fiber optic components with a photonic integrated circuit that can be manufactured using standard semiconductor fabrication processes. This substitution enables scalable production through wafer-level manufacturing, significantly reducing the cost per device while maintaining the coherent optical performance.
Solution Approach 2:
The patent changes the manufacturing approach from custom fiber assembly to standardized photonic chip fabrication. By adopting semiconductor manufacturing parameters and processes (such as photolithography, etching, and deposition), the production becomes scalable and cost-effective, enabling mass production of coherent lasers at lower costs.
3Volume of moving object
If chip-based waveguide lasers are miniaturized to reduce size, then device compactness is improved, but laser linewidth worsens
Solution Approach 1:
The patent merges the gain medium, waveguide, and optical feedback structures into a single integrated photonic chip. This integration allows the laser cavity to be miniaturized while maintaining narrow linewidth through precise control of the optical path and feedback mechanisms within the compact chip structure, achieving both small size and high spectral purity.
Solution Approach 2:
The patent replaces the long fiber optic cavity with a compact integrated photonic circuit on a chip. The mechanical flexibility of fiber is substituted with rigid waveguides that enable precise optical path control in a miniaturized format, maintaining narrow linewidth through integrated optical feedback structures rather than long physical cavities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves a fully integrated chip-scale laser with a free-running intrinsic linewidth of 50 Hz, relative intensity noise of 10 MHz offset, and output power up to 17 mW, surpassing the performance of fiber lasers in tuning and side mode suppression ratio, enabling applications in LiDAR, microwave photonics, and optical frequency synthesis.
Implementation Method 1
at least one pump laser diode to provide electromagnetic radiation to the gain medium waveguide to generate lasing operation by the at least one photonic integrated circuit
Implementation Method 2
generate lasing operation by the at least one photonic integrated circuit
Implementation Method 3
at least a first optical reflector and a second optical reflector, the at least one gain medium waveguide being located inside an optical cavity formed between the first and second optical reflectors to provide optical feedback to the at least one gain medium waveguide
Implementation Method 4
benefit from the advantageous Erbium-based gain properties including slow gain dynamics, temperature insensitivity, low amplification related noise figure
Data Source
AI summary
Hybrid integrated photonic integrated circuit laser comprising a photonic integrated circuit including an elongated optical waveguide comprising an elongated gain medium waveguide, at least a first and second optical reflector, the gain medium waveguide being located or extending between the first and second optical reflectors and being located inside an optical cavity to provide optical feedback. Further comprising a pump laser diode to provide electromagnetic radiation to the gain medium waveguide. The elongated optical waveguide, and the first and second optical reflectors are monolithically integrated inside the photonic integrated circuit. The gain medium waveguide comprises a rare-earth ion implanted silicon nitride waveguide core. The pump laser diode is positioned adjacent to the at least one photonic integrated circuit and is edge coupled or facet coupled to a lateral edge or a facet of the photonic integrated circuit to provide pump radiation to the rare-earth ion implanted silicon nitride waveguide core.