Multi-Stage Erase Operation for Memory Cell Interference Reduction

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Solution Overview

Problem

Cell-to-cell interference in memory sub-systems increases due to pillar pitch scaling, leading to expanded threshold voltage distributions and reduced read window budget, which affects data reliability and storage efficiency.

Innovation Solution

A multi-stage erase operation is executed, involving alternating wordline erase sub-operations to inject electrons into inter-cell regions of the charge trap layer, reducing cell-to-cell interference by shielding electric fields and minimizing electron injection during subsequent programming operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If pillar pitch is scaled down to increase storage density, then storage capacity is improved, but cell-to-cell interference increases

Engineering Contradiction:
Improvestorage densityVSAvoidcell-to-cell interference
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by executing a multi-stage erase operation before programming. Specifically, electrons are injected into inter-cell regions during the erase stage using alternating wordline activation, and then a verify operation checks the threshold voltage distribution. This preliminary preparation reduces cell-to-cell interference before the actual programming operation, enabling tighter pillar pitch scaling while maintaining data reliability.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If multi-stage erase operation is implemented to reduce cell-to-cell interference, then data reliability is improved, but operation complexity increases

Engineering Contradiction:
Improvedata reliabilityVSAvoidoperation complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the erase operation into multiple distinct stages: an initial erase stage that activates alternating wordlines in sequence, an intermediate verify stage that checks threshold voltage distribution, and a final programming stage. This segmentation allows the system to manage complexity through structured, manageable steps rather than a single complex operation, improving data reliability while keeping the operation sequence organized and controllable.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The multi-stage erase operation effectively reduces cell-to-cell interference, maintaining data reliability and storage efficiency by minimizing the number of electrons that can be programmed into inter-cell regions, thereby preserving the read window budget.

Implementation Method 1

A multi-stage erase operation is executed, involving alternating wordline erase sub-operations to inject electrons into inter-cell regions of the charge trap layer

Methodology Applied
Scientific EffectElectron injection:

Implementation Method 2

reducing cell-to-cell interference by shielding electric fields and minimizing electron injection during subsequent programming operations

Methodology Applied
Scientific EffectElectric field shielding:

Data Source

PatentUS20250118365A1Erase operation with electron injection for reduction of cell-to-cell interference in a memory sub-system
Publication Date: 2025.04.10 MICRON TECHNOLOGY INC
  • US20250118365A1 patent drawing
  • US20250118365A1 patent drawing
  • US20250118365A1 patent drawing

AI summary

Control logic in a memory device causes a programming pulse to be applied to a set of wordlines, where the programming pulse causes a set of electrons to be injected into a first set of gate regions and a second set of gate regions. The control logic executes a first erase sub-operation on a first subset of the set of wordlines to remove a first subset of the set of electrons from the first set of gate regions. The control logic executes a second erase sub-operation on a second subset of the set of wordlines to remove a second subset of the set of electrons from the second set of gate regions.