ErgFET Sensor Equilibrium Pump Electrode Leakage Current Compensation
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Solution Overview
Problem
Existing electric field sensors fail to measure true electrostatic fields due to inaccuracies caused by leakage currents and distortions from conducting components, leading to erroneous results.
Innovation Solution
The development of equilibrium reversing gate Field Effect Transistors (ergFETs) with an equilibrium pump electrode, which reverses the effects of leakage currents by applying a non-direct electrostatic potential, allowing for accurate measurement of ephemeral electric potentials and fields before equilibrium is reached.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional electric field sensors with conducting components (cables, integrated circuits) are used, then the sensor can detect electric fields, but the conducting components create electrostatic potential distortions that prevent accurate measurement of true electrostatic fields
Solution Approach 1:
The patent removes conducting components (cables, integrated circuits) from the sensor design and replaces them with non-conducting materials. The sensor uses non-conducting support structures and non-conducting connections to eliminate the source of electrostatic distortion, allowing accurate measurement of true electrostatic fields without the harmful interference from conventional conducting elements
Solution Approach 2:
The patent changes the electrical conductivity parameter of the sensor components from conducting to non-conducting. By using materials with extremely low conductivity (non-conducting support structures, non-conducting connections), the sensor minimizes its interaction with the electrostatic field being measured, thereby eliminating distortion and enabling accurate measurement of true electrostatic potential and field strength
2Measurement precision
If standard FET sensors are used, then the sensor structure is simple, but leakage currents affect the gate response and reduce measurement accuracy
Solution Approach 1:
The patent introduces an equilibrium pump electrode as an intermediary element connected to the FET gate through a non-conducting path. This electrode serves as a mediator that actively compensates for leakage currents by pumping charge to maintain equilibrium at the gate, thereby eliminating the harmful effect of leakage while preserving the simple FET sensor structure
Solution Approach 2:
The equilibrium pump electrode implements a feedback mechanism where the sensor continuously monitors the gate potential and actively adjusts charge distribution to counteract leakage currents. The feedback loop maintains the gate at equilibrium potential despite ongoing leakage, ensuring accurate measurement of ephemeral electric potentials without being affected by energy loss from leakage currents
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ergFETs provide precise measurements of electrostatic potentials and fields by minimizing the impact of leakage currents, enabling the detection of true electrostatic values and improving sensor accuracy.
Implementation Method 1
an equilibrium pump electrode, which reverses the effects of leakage currents by applying a non-direct electrostatic potential
Implementation Method 2
a field effect transistor (FET) that controls equilibrium by reversing the effects of leakage currents affecting the gate response of the FET
Data Source
AI summary
Systems, methods, and devices of the various embodiments provide a field effect transistor (FET) that controls equilibrium by reversing the effects of leakage currents affecting the gate response of the FET by using an equilibrium pump electrode. The equilibrium reversing gate FETs (ergFETs) of the various embodiments, may include an equilibrium pump electrode located within a non-conducting gap. The ergFETs of the various embodiments may provide solid state ephemeral electric potential and electric field sensor systems and methods for measuring ephemeral electric potentials and electric fields.