ESC Gasket Design for High Power Plasma Etching

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Solution Overview

Problem

Current electrostatic chuck (ESC) designs fail to withstand high power and high bias voltages used in high aspect ratio plasma etching processes, leading to bond failures and plasma ignition due to dielectric breakdown and excessive surface temperature changes.

Innovation Solution

The ESC design incorporates a side wall bonding layer protection O-ring or metal gasket that fills over 90% of the pocket with a 12% compression, reducing gas discharge and preventing corrosion, while also conducting accumulated charge away from the bonding layer, thus enhancing the seal and reducing arcing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high power and high bias voltage are applied to achieve high aspect ratio plasma etching, then etching performance is improved, but dielectric breakdown and bond failures occur

Engineering Contradiction:
Improveetching performanceVSAvoidbond failure resistance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A bonding layer is introduced as an intermediary between the electrostatic chuck and the dielectric puck. This bonding layer acts as a protective mediator that prevents direct exposure of the adhesive bond to high power plasma, thereby preventing bond failures while maintaining the high power etching process

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The bonding layer is designed as a sacrificial protective element that can be replaced. It absorbs the damage from plasma exposure and high power conditions, protecting the more critical and expensive components (electrostatic chuck and dielectric puck) from degradation

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

2Productivity

If high power plasma is applied to achieve high aspect ratio etching, then etching capability is improved, but plasma ignition in holes and openings occurs

Engineering Contradiction:
Improveaspect ratio etching capabilityVSAvoidplasma ignition in holes
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

Holes and openings are removed from the electrostatic chuck design. The electrostatic chuck is designed without holes or openings that could trap plasma, thereby eliminating the source of plasma ignition problems while maintaining the ability to apply high power plasma for etching

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The design converts the potential harm of plasma trapping by eliminating holes and openings. By creating a solid, hole-free surface, the design prevents plasma ignition issues that would otherwise occur in cavities, turning a design constraint into a solution

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Productivity

If high bias power is applied to support high aspect ratio plasma etching, then etching performance is improved, but ESC surface temperature changes at higher rate

Engineering Contradiction:
Improveplasma etching performanceVSAvoidsurface temperature stability
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The system is segmented into distinct functional layers: the electrostatic chuck, the bonding layer, and the dielectric puck. This segmentation allows the dielectric puck to serve as a thermal buffer that absorbs and distributes heat, reducing surface temperature fluctuations while maintaining high bias power for plasma etching

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively protects the bonding layer from plasma damage, reduces arcing, and maintains a secure seal, enabling the ESC to operate reliably under high power and high bias conditions.

Implementation Method 1

a gasket between the mounting ring and the plate, the gasket configured to protect the adhesive

Methodology Applied
Scientific EffectCompression: Compression

Implementation Method 2

Common processes use an ESC to hold a wafer with 2 MHz 6.5 KW plasma power applied to the wafer for etching applications

Methodology Applied
Scientific EffectElectrostatic force: Electrostatics

Implementation Method 3

In these manufacturing processes, plasma may be used for depositing or etching various material layers

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 4

the pedestal may include an embedded heater adapted to control the temperature of the substrate and/or provide elevated temperatures

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11127619B2Workpiece carrier for high power with enhanced edge sealing
Publication Date: 2021.09.21 APPLIED MATERIALS INC
  • US11127619B2 patent drawing
  • US11127619B2 patent drawing
  • US11127619B2 patent drawing

AI summary

A workpiece carrier suitable for high power processes is described. It may include a puck to carry the workpiece, a plate bonded to the puck by an adhesive, a mounting ring surrounding the puck and the cooling plate, and a gasket between the mounting ring and the plate, the gasket configured to protect the adhesive.