Electrostatic Chuck Temperature Control for Plasma Processing
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Solution Overview
Problem
ESC drift in plasma processing apparatuses affects the thermal transmission characteristics between the stage and semiconductor wafers, leading to variations in wafer temperature and reduced processing precision, which decreases semiconductor device yield.
Innovation Solution
A stage with integrated temperature measuring and adjusting units, along with a substrate temperature controlling unit, ensures that semiconductor wafers are maintained at a target temperature through real-time temperature adjustments, and a stage recovery unit stabilizes the surface state by comparing temperature profiles and performing appropriate plasma processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma processing is performed repeatedly on semiconductor wafers, then production volume increases, but the stage surface state changes causing ESC drift and temperature variations
Solution Approach 1:
The system performs preliminary measurements of the stage surface state (roughness, deposits) before plasma processing, and pre-adjusts temperature compensation parameters to counteract expected ESC drift during processing sequences
Solution Approach 2:
The system continuously monitors stage surface state changes through measurements taken at predetermined intervals, and dynamically adjusts temperature compensation parameters based on detected variations in surface roughness and deposit accumulation
2Object-generated harmful factors
If waferless dry cleaning is performed to remove deposits from the stage, then the stage surface is cleaned, but the surface becomes roughened
Solution Approach 1:
The system measures surface roughness changes after cleaning operations and adjusts temperature compensation parameters to account for the altered thermal conduction characteristics caused by increased surface roughness
3Productivity
If semiconductor wafers are repeatedly attracted onto the stage, then processing throughput increases, but minute undulations on the stage surface are smoothed down
Solution Approach 1:
The system performs preliminary measurements of surface undulations before processing sequences and pre-adjusts temperature compensation parameters to account for expected smoothing effects during wafer attraction cycles
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution ensures consistent temperature control across semiconductor wafers, improving processing precision and semiconductor device yield by compensating for ESC drift and maintaining optimal thermal transmission.
Implementation Method 1
the thermal transmission characteristics between the stage and the semiconductor wafer change
Implementation Method 2
The stage has an ESC (electrostatic chuck) function of electrostatically attracting (chucking) thereto the semiconductor wafer mounted thereon through application of a predetermined voltage
Implementation Method 3
carries out plasma processing such as etching using plasma on semiconductor wafers as substrates processed for manufacturing semiconductor devices
Implementation Method 4
an upper electrode and a lower electrode being provided in the chamber for supplying predetermined RF (radio frequency) power for producing the plasma
Data Source
AI summary
A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.