ESD Clamp Circuit With Multi-Path Low-Trigger Discharge
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Integrated circuits are vulnerable to damage from electrostatic discharge (ESD) events due to insufficient ESD protection, particularly when the trigger voltage of ESD circuits is close to the breakdown voltage of the circuit components, leading to delayed discharge and potential damage.
Innovation Solution
The implementation of n-type transistors and a power clamp module with reduced trigger voltage, along with multiple discharge paths and an embedded n-type MOSFET, enhances the robustness of ESD protection by ensuring timely discharge of electrostatic charges, even during rapid voltage increases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the trigger voltage of ESD circuits is set close to the breakdown voltage of circuit components, then the ESD protection activates at higher voltage levels, but the discharge is delayed and components may be damaged
Solution Approach 1:
The ESD protection circuit is divided into multiple parallel discharge paths: a first discharge path activated at a first trigger voltage level and a second discharge path activated at a second trigger voltage level. This segmentation allows different paths to handle different voltage levels, ensuring timely discharge without waiting for the breakdown voltage, thus resolving the contradiction between protection effectiveness and discharge timing.
2Productivity
If a single discharge path is used, then the circuit structure is simple, but the discharge capability is insufficient during rapid voltage increases
Solution Approach 1:
The ESD protection circuit employs dynamic discharge paths that are selectively activated based on the voltage level. The first discharge path is activated at a lower trigger voltage while the second discharge path is activated at a higher trigger voltage. This dynamic activation ensures adequate discharge capability during rapid voltage increases while maintaining circuit simplicity through conditional path selection.
3Loss of time
If the trigger voltage is reduced to enable faster discharge, then the discharge timing improves, but the ESD protection may activate too early
Solution Approach 1:
The invention changes the trigger voltage parameter to different levels for different discharge paths. The first discharge path uses a first trigger voltage level while the second discharge path uses a second trigger voltage level. This parameter differentiation allows the circuit to activate discharge at appropriate voltage levels, preventing premature activation while ensuring timely discharge, thus resolving the contradiction between discharge timing and protection activation accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The enhanced ESD circuit design reduces the overall trigger voltage, allowing for faster and more effective discharge of electrostatic charges, thereby protecting sensitive components from damage.
Implementation Method 1
An electronic device, e.g., a chip or integrated circuit, may accumulate electrostatic charges thereon. The electronic device may be damaged or even destroyed if the accumulated electrostatic charges are not discharged properly. Electrostatic discharge (ESD) protection may be called upon to discharge the accumulated electrostatic charges.
Data Source
AI summary
The present disclosure provides electrostatic discharge circuits and structures and methods for operating the electrostatic discharge circuits and structures. A circuit includes a first transistor and a second transistor. Each of the first transistor and second transistor includes a drain, a source, and a gate. The drain of the first transistor is connected to a first terminal; the source thereof is connected to receive a first voltage, and the gate thereof is connected to receive a second voltage different from the first voltage. The source and the gate of the second transistor are connected to receive the second voltage, and the drain thereof is connected to the first terminal. In response to the terminal reaching a trigger voltage, the first transistor is configured to be turned on, such that electrostatic charges at the first terminal are configured to be discharged through the first transistor.