Electrostatic Discharge Diode With Segmented Dopant Regions
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Solution Overview
Problem
Existing electrostatic discharge diodes either have low dopant concentration, making them unsuitable for discharging electrostatic voltage effectively or high dopant concentration, which makes them vulnerable to electrical surges, leading to dielectric breakdown in semiconductor circuits.
Innovation Solution
The design incorporates multiple diodes with varying trigger voltages and resistor configurations to create an electrostatic discharge diode that can effectively discharge electrostatic voltage while preventing damage from electrical surges, combining high and low dopant concentration diodes to manage voltage and current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a low voltage diode with high dopant concentration is used, then electrostatic voltage can be discharged effectively, but the diode is vulnerable to electrical surges causing dielectric breakdown
Solution Approach 1:
The invention divides the single diode structure into multiple diodes with different dopant concentrations (first diode with high concentration, second diode with low concentration). Each diode handles different aspects of voltage protection, allowing the system to benefit from both high electrostatic discharge capability and high electrical surge resistance simultaneously
Solution Approach 2:
Different regions of the semiconductor structure have different dopant concentrations optimized for specific functions. The first diode region has high dopant concentration for effective electrostatic discharge, while the second diode region has low dopant concentration for electrical surge protection, allowing each local region to perform its specialized function
2Object-affected harmful factors
If a high voltage diode with low dopant concentration is used, then electrical surge resistance is improved, but electrostatic voltage cannot be discharged effectively
Solution Approach 1:
The protection function is segmented into two diodes: the first diode with high dopant concentration handles electrostatic discharge, while the second diode with low dopant concentration provides electrical surge resistance. This segmentation allows each component to be optimized for its specific purpose
Solution Approach 2:
The semiconductor structure implements local quality by creating regions with different dopant concentrations. The first diode region is optimized for electrostatic discharge with high concentration, while the second diode region is optimized for surge resistance with low concentration, allowing simultaneous achievement of both protection goals
3Device complexity
If a single trigger voltage diode is used, then the structure is simple, but it cannot simultaneously protect against both electrostatic discharge and electrical surge
Solution Approach 1:
Rather than using a single complex diode, the invention segments the protection function into multiple simpler diodes with different characteristics. This approach maintains relative structural simplicity while achieving comprehensive protection against both electrostatic discharge and electrical surge through the combined action of the first and second diodes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diode effectively protects semiconductor circuits from both electrostatic discharge and electrical surges by ensuring low trigger voltage for discharging and high thermal breakdown voltage, preventing dielectric breakdown.
Implementation Method 1
when a voltage generated by static electricity (hereafter called 'electrostatic voltage') is larger than the trigger voltage, the electrostatic discharge diode is turned on and the electrostatic voltage is discharged
Implementation Method 2
the electrostatic voltage input to the semiconductor circuit is not larger than the trigger voltage and electrostatic voltage is clamped as the trigger voltage
Data Source
AI summary
The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a substrate; an n− region formed on the N-type well; a plurality of p− regions penetrated and formed in the n− region; a plurality of n+ regions penetrated and formed in a first layer in which the n− region and a plurality of the p− regions are formed; a plurality of n+ regions penetrated and formed in a first layer in which the n− region and a plurality of the p− regions are formed; and a plurality of p+ regions penetrated and formed in the first layer, wherein a first n+ region among a plurality of the n+ regions and a first p+ region corresponding to the first n+ region are penetrated and formed in each other region of the corresponding first p− region among a plurality of the p− regions.