ESD Protection Circuit With Dual Amplifiers for Clamp Voltage Control

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Solution Overview

Problem

Existing electrostatic protection circuits in semiconductor devices struggle to simultaneously maintain a discharge start voltage that is higher than the power supply voltage while ensuring the clamp voltage does not exceed the breakdown withstand voltage of the internal circuit, particularly when facing ESD and EMS noise.

Innovation Solution

The introduction of a second amplifier circuit in the electrostatic protection circuit, which operates in conjunction with a first amplifier circuit to adjust the discharge start voltage and clamp voltage, ensuring compatibility with the power supply voltage and breakdown withstand voltage by separately controlling the operation of both amplifiers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If the discharge start voltage is set lower than the power supply voltage to ensure the internal circuit operates normally during discharge, then the ease of operation is improved, but the reliability deteriorates because the internal circuit may be damaged by excessive discharge current

Engineering Contradiction:
Improveoperation of internal circuitVSAvoidprotection from ESD noise
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The discharge element's ON resistance is dynamically controlled by adjusting the drive signal voltage. The control circuit varies the gate voltage of the discharge element based on the detected voltage level, enabling the resistance to adapt between different states. This dynamic control allows the discharge start voltage to be higher than the power supply voltage while maintaining safe discharge current levels, resolving the contradiction between ease of operation and reliability

Inventive Principle:
Principle #15Dynamics

2Reliability

If the discharge start voltage is set higher than the power supply voltage to improve protection effectiveness, then the reliability is improved, but the ease of operation deteriorates because the internal circuit operation may be hindered during discharge

Engineering Contradiction:
Improveprotection from ESD noiseVSAvoidoperation of internal circuit
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The system dynamically adjusts the discharge element's ON resistance based on the voltage detection results. When voltage exceeds the power supply voltage, the control circuit increases the drive signal to lower the ON resistance, enabling effective discharge protection. The dynamic control ensures that despite the higher discharge start voltage, the internal circuit operates normally by maintaining appropriate current levels through real-time resistance adjustment

Inventive Principle:
Principle #15Dynamics

3Device complexity

If a single amplifier circuit is used to detect voltage and drive the discharge element, then the device complexity is reduced, but the ability to independently control discharge start voltage and clamp voltage deteriorates

Engineering Contradiction:
Improvecircuit structureVSAvoidcontrol of discharge parameters
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The voltage detection and control function is divided into two independent amplifier circuits: a first amplifier for detecting voltage and generating a first drive signal, and a second amplifier for detecting voltage and generating a second drive signal. This segmentation allows independent optimization of each amplifier's parameters, enabling separate control of discharge start voltage and clamp voltage while maintaining manageable overall circuit complexity

Inventive Principle:
Principle #1Segmentation

Data Source

PatentEP3667722B1Semiconductor device and semiconductor device system
Publication Date: 2025.07.09 RENESAS ELECTRONICS CORP
  • EP3667722B1 patent drawingFigure 1
  • EP3667722B1 patent drawingFigure 2
  • EP3667722B1 patent drawingFigure 3

AI summary

The present invention provides both a margin of a discharge start voltage with respect to a power supply voltage and a margin of a clamp voltage with respect to a breakdown withstand voltage of an internal circuit. The semiconductor device according to the embodiment includes a first amplifier circuit for amplifying a detection signal and outputting a drive signa, a second amplifier circuit for feedback-amplifying the detection signal to be input to the first amplifier circuit, and a discharge element whose discharge capability changed according to the magnitude of the drive signal.