ESD Gated Diode Enclosed Pattern Optimization
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Solution Overview
Problem
Conventional gated diodes in ESD protection circuits face challenges in achieving high current conduction capability while minimizing parasitic capacitance, particularly in high-speed RF integrated circuits, where increasing diode size leads to performance degradation due to increased capacitance.
Innovation Solution
The method involves forming a semiconductor device with a well region and gate structures having enclosed patterns, with specific conductivity types and isolation regions, to optimize the ratio of conductive length to bottom area, thereby enhancing ESD protection capability and reducing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the size of the gated diode is increased to obtain adequate ESD protection, then the current conduction capability is improved, but the parasitic capacitance increases which degrades device performance
Solution Approach 1:
The patent divides the gated diode structure into multiple segments with different conductivity types arranged in an enclosed pattern. This segmentation allows the diode to achieve high current conduction capability through multiple conduction paths while reducing parasitic capacitance by distributing the charge storage across segmented regions rather than a single large area.
Solution Approach 2:
The patent applies local quality by creating regions with different conductivity types (first conductivity type and second conductivity type) in specific locations within the enclosed pattern. This allows different parts of the structure to have optimized properties for their specific functions, enabling high current conduction in certain regions while minimizing capacitance in others.
2Object-affected harmful factors
If the area of the N+ conductive region is increased to reduce parasitic capacitance, then the capacitance is reduced, but the current conduction capability decreases
Solution Approach 1:
The patent segments the conductive regions into multiple smaller regions with different conductivity types arranged in an enclosed pattern. This segmentation creates multiple conduction paths that collectively provide high current conduction capability while each individual region maintains a smaller area to limit parasitic capacitance.
Solution Approach 2:
The patent employs a nested structure where regions of different conductivity types are arranged concentrically in an enclosed pattern. This nesting allows inner regions to provide conduction paths while outer regions are optimized for capacitance reduction, achieving both objectives simultaneously through the nested arrangement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in improved ESD protection with increased current conduction capability and lower parasitic capacitance, enhancing the performance of RF integrated circuits by optimizing the parameter k, which is the ratio of conductive length to bottom area.
Implementation Method 1
performing ion implantation on the first region such that the first region has a first conductivity type, and performing ion implantation on the second region such that the second region has a second conductivity type
Data Source
AI summary
A method of manufacturing a semiconductor device is provided. The method includes providing a substrate; forming a well region on the substrate; forming at least one first gate structure on the well region, wherein the first gate structure includes a gate insulating layer and a first gate electrode formed on the gate insulating layer, wherein the first gate electrode is formed having a first enclosed pattern on a surface of the well region; wherein an area inside the first enclosed pattern is defined as a first region, and an area outside the first enclosed pattern is defined as a second region; performing ion implantation on the first region such that the first region has a first conductivity type, and performing ion implantation on the second region such that the second region has a second conductivity type, wherein the first conductivity type and the second conductivity type are different.