ESD Protection Interconnect Resistance Design
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Solution Overview
Problem
Existing semiconductor devices face challenges in effectively protecting internal circuit elements from electrostatic discharge (ESD) breakdown due to current concentration and inefficient pulse dissipation, particularly with off transistors requiring large widths and complex structures that lead to non-uniform operation and reduced ESD protection functionality.
Innovation Solution
A semiconductor device design featuring interconnects with a lower resistance between the external connection terminal and the ESD protection element, and a higher resistance between the ESD protection element and the internal element, allowing for preferential absorption and signal transformation of electrostatic pulses to prevent internal element propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large width transistor is used to handle large ESD current, then the ESD protection capability is improved, but the transistor operation becomes non-uniform and current concentration occurs
Solution Approach 1:
The patent divides the single large-width transistor into multiple smaller transistors connected in parallel. Each transistor has its own drain region, source region, and gate electrode. This segmentation prevents current concentration in any single transistor while maintaining the total current handling capability through the parallel configuration, thus resolving the contradiction between ESD protection capability and operation uniformity.
2Speed
If the distance between contact hole and gate electrode is reduced to accelerate transistor operation, then the transistor response speed is improved, but the width of drain region must be reduced which limits ESD protection function
Solution Approach 1:
By segmenting the transistor structure into multiple parallel units, each with optimized dimensions, the patent achieves both fast operation and sufficient ESD protection. Each small transistor can be designed with appropriate contact-hole-to-gate distance for fast response, while the parallel arrangement provides the total current handling capability needed for ESD protection.
Solution Approach 2:
The patent extends the transistor arrangement into the lateral dimension by placing multiple transistors side-by-side in parallel. This dimensional expansion allows each transistor to have smaller individual width while collectively providing the required total width for ESD protection, thus resolving the contradiction between operation speed and protection function.
3Quantity of substance
If multiple transistors are combined in comb shape, then the current handling capability is improved, but uniform operation of all transistors becomes difficult to achieve
Solution Approach 1:
The patent segments the current handling function across multiple independent but identical transistor units. Each unit has the same structure and dimensions, ensuring uniform operation characteristics. The parallel connection topology ensures that current distributes relatively evenly across all units, achieving both high current handling capability and uniform operation.
Solution Approach 2:
The patent applies identical structural design (same width, length, contact hole positioning, and gate electrode configuration) to each transistor unit. This local uniformity in design ensures that each transistor has the same electrical characteristics and operates uniformly, while the collective arrangement provides the required current handling capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively draws electrostatic pulses into the ESD protection element, transforming fast pulses into slow signals, thereby enhancing ESD protection and preventing internal element breakdown, ensuring a sufficient ESD protection function.
Implementation Method 1
a resistance of the interconnect extending from the external connection terminal to the electrostatic discharge protection element is smaller than a resistance of the interconnect extending from the electrostatic discharge protection element to the internal elements
Implementation Method 2
an electrostatic discharge protection element formed between an external connection terminal and the internal circuit region in order to protect the internal element from breakdown due to electrostatic discharge
Data Source
AI summary
Provided is a semiconductor device including an electrostatic discharge (ESD) protection element provided between an external connection terminal and an internal circuit region. In the semiconductor device, interconnect extending from the external connection terminal to the ESD protection element includes a plurality of metal interconnect layers so that a resistance of the interconnect extending from the external connection terminal to the ESD protection element is made smaller than a resistance of interconnect extending from the ESD protection element to an internal element. The interconnect extending from the ESD protection element to the internal element includes metal interconnect layers equal to or smaller in number than the plurality of interconnect layers used in the interconnect extending from the external connection terminal to the ESD protection element.