ESD Protection Circuit with Dynamic Control Module for Leakage Reduction
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Solution Overview
Problem
Conventional ESD protection circuits, such as those using silicon controlled rectifiers (SCRs), face challenges in advanced semiconductor manufacturing due to high trigger voltage, low holding voltage, and susceptibility to latch-up, particularly in dynamic random access memory (DRAM) products, and also suffer from leakage issues in diode string-triggered SCRs.
Innovation Solution
An ESD protection circuit comprising a control module and an ESD protection module, where the control module outputs a low-level signal to trigger the ESD protection module to discharge electrostatic current during an ESD event and a high-level signal to reduce static leakage current when no event occurs, utilizing a silicon controlled rectifier and diode string with adjustable trigger voltage and holding voltage greater than the power supply voltage to prevent latch-up.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a traditional ESD protection circuit using silicon controlled rectifier is used, then ESD protection capability is provided, but high trigger voltage and low holding voltage cause latch-up susceptibility
Solution Approach 1:
The patent changes the voltage parameters of the ESD protection circuit by using a voltage divider network (resistors R1 and R2) to adjust the trigger voltage and holding voltage of the silicon controlled rectifier. This allows the trigger voltage to be lower and the holding voltage to be higher than the power supply voltage, preventing latch-up while maintaining ESD protection capability.
2Reliability
If a diode string-triggered SCR is used to reduce trigger voltage, then ESD protection is improved, but leakage current increases
Solution Approach 1:
The patent makes the ESD protection circuit dynamic by using a control module that can switch between different states. The circuit is enabled during ESD events and disabled during normal operation, allowing the leakage current to be minimized when protection is not needed while maintaining protection capability when required.
Solution Approach 2:
The control module periodically monitors for ESD events and activates the protection circuit only when needed. This periodic activation reduces the overall leakage current by keeping the protection circuit in a high-impedance state during normal operation and switching it on only during ESD events.
3Reliability
If the ESD protection circuit is always enabled to provide continuous protection, then ESD protection capability is maintained, but static leakage current increases
Solution Approach 1:
The control module performs preliminary detection of ESD events and activates the protection circuit in advance. The circuit includes detection circuitry that monitors for ESD conditions and switches on the protection path before significant leakage current can accumulate, providing protection while minimizing energy loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively protects integrated circuits from electrostatic discharge with a low trigger voltage, reduced leakage current, and improved ESD protection capability, suitable for advanced manufacturing processes, especially in DRAM chips, by avoiding latch-up and minimizing static leakage.
Implementation Method 1
configured to output a low-level signal to the ESD protection module to trigger the ESD protection module to discharge an electrostatic current when an ESD event occurs
Implementation Method 2
utilizing a silicon controlled rectifier and diode string with adjustable trigger voltage and holding voltage
Data Source
AI summary
Embodiments relate to an electrostatic discharge (ESD) protection circuit and a chip. The ESD protection circuit includes: an ESD protection module, arranged inside a protected chip and connected to a protected circuit; and a control module, connected to the ESD protection module and configured to output a low-level signal to the ESD protection module to trigger the ESD protection module to discharge an electrostatic current when an ESD event occurs in the protected chip, and output a high-level signal to the ESD protection module to reduce a static leakage current of the ESD protection module when the ESD event does not occur in the protected chip.