ESD Protection Structure With Deep Well Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor integrated circuit devices are susceptible to damage from electrostatic discharge, leading to reduced production efficiency and yield due to low holding voltage in snapback breakdown conditions, which can cause latchup in high-power applications.
Innovation Solution
An electrostatic discharge protection structure is designed with a semiconductor substrate, multiple well regions, and conductive regions of varying carrier concentrations to provide additional current paths for discharging electrostatic discharge, including a parasitic bipolar junction transistor and deep well regions, which maintain holding voltage at a specified level.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the holding voltage is pulled down to a low voltage in snapback breakdown condition, then the electrostatic discharge protection is activated, but the high-voltage integrated circuit device becomes susceptible to latchup
Solution Approach 1:
Different well regions are assigned different carrier types and concentrations to create localized electrical characteristics. The first well region contains first type conducting carriers while the second and deep well regions contain second type conducting carriers with varying concentrations, creating local quality variations that enable ESD protection while preventing latchup through controlled current distribution.
Solution Approach 2:
The protection structure extends into the vertical dimension by introducing a deep well region disposed under the second well region and first conductive region. This vertical stacking creates multiple current paths at different depths, providing ESD protection while maintaining stable holding voltage through the three-dimensional configuration of well regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The additional current paths effectively prevent low holding voltage issues during snapback breakdown, enhancing the protection of semiconductor devices against electrostatic discharge.
Implementation Method 1
In the process of producing or using a semiconductor integrated circuit device, electrostatic discharge (ESD) may result in sudden flow of electricity
Implementation Method 2
the holding voltage of the electrostatic discharge protection structure in a snapback breakdown condition may be pulled down to a low voltage
Data Source
AI summary
An electrostatic discharge protection structure includes a semiconductor substrate, a first well region, a gate structure, a second well region, a second well region, a second conductive region, and a deep well region. The first well region contains first type conducting carriers. The second well region is disposed within the first well region, and contains second type conducting carriers. The first conductive region is disposed on the surface of the first well region, and contains the second type conducting carriers. The deep well region is disposed under the second well region and the first conductive region, and contacted with the second well region. The deep well region contains the second type conducting carriers.