ESD Protection Diode with Segmented Active Region Layout

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Solution Overview

Problem

Conventional ESD protection diodes suffer from uneven current distribution, leading to potential damage at specific points due to concentrated current flow, which can result in inefficient ESD current diversion and reduced reliability.

Innovation Solution

The ESD protection diode design features alternating parallel lines of active and sub-regions with strategically arranged contacts to ensure uniform resistance and distribute ESD current evenly across the device, preventing concentration at particular points.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If contacts are arranged at corners of the active region, then the number of current paths increases and resistance decreases, but current concentrates on corner contacts causing potential damage

Engineering Contradiction:
Improvecontact damage resistanceVSAvoidcurrent distribution uniformity
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The active region is divided into multiple segments (corner contacts and non-corner contacts) with different configurations. Corner contacts have surrounding sub-region contacts providing multiple current paths, while non-corner contacts have fewer surrounding paths. This segmentation allows each contact type to be optimized for its specific location, distributing current more uniformly across all contacts rather than concentrating it at corners.

Inventive Principle:
Principle #1Segmentation

2Reliability

If many sub-region contacts surround corner active contacts, then resistance at corner paths decreases, but current flow through non-corner active contacts is reduced

Engineering Contradiction:
ImproveESD current diversion efficiencyVSAvoidcurrent flow distribution
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

Different regions of the active region are given different local qualities in terms of contact arrangement. Corner contacts are surrounded by sub-region contacts to provide low-resistance paths, while non-corner contacts are arranged to ensure they also receive sufficient current. This local differentiation optimizes current distribution across the entire structure, ensuring that all contacts contribute to ESD current diversion rather than allowing current to bypass certain contacts.

Inventive Principle:
Principle #3Local quality

3Reliability

If the active region occupies large surface area, then ESD current diversion capacity increases, but current may not flow efficiently through all regions

Engineering Contradiction:
ImproveESD protection capabilityVSAvoidcurrent flow efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The contact arrangement transitions from a two-dimensional planar distribution to a more structured multi-dimensional pattern where corner and non-corner contacts are strategically positioned with varying numbers of surrounding sub-region contacts. This dimensional reorganization ensures that current paths are optimized throughout the entire active region surface area, allowing efficient current flow through all regions while maintaining high ESD protection capability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances the reliability and performance of ESD protection by uniformly distributing ESD current, reducing the risk of component deterioration and improving overall ESD current diversion efficiency.

Implementation Method 1

Electrostatic discharge (ESD) usually occurs when a semiconductor device comes into contact with or is positioned near an object charged to a considerably different electrostatic potential than that of the semiconductor device. During ESD, a large amount of charges are usually transferred to the semiconductor device

Methodology Applied
Scientific EffectElectrostatic discharge: Electrostatic Discharge

Implementation Method 2

In a portion where the contact is connected to the well, a heavy impurity region is formed in order to form an Ohmic contact

Methodology Applied
Scientific EffectOhmic contact: Ohm's Law

Data Source

PatentUS7791142B2Electrostatic discharge protection diode
Publication Date: 2010.09.07 SAMSUNG ELECTRONICS CO LTD
  • US7791142B2 patent drawing
  • US7791142B2 patent drawing
  • US7791142B2 patent drawing

AI summary

Provided is an electrostatic discharge (ESD) protection diode including: a well formed of a first conductivity in a semiconductor substrate; an active region that is formed of a second conductivity in the well and includes a plurality of first active lines extending in a first direction; a sub-region of the first conductivity including a plurality of first sub-lines extending in the first direction, the first sub lines being formed in the well, arranged to surround an outer region of the first active lines, and arranged in alternation with the first active lines; a device isolation region separating the active regions and the sub-regions; a plurality of active contacts arranged in a row in the active regions; and a plurality of sub-contacts arranged in a row in the sub-region.