Cross-Domain ESD Protection Circuit with Node Voltage Control
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Solution Overview
Problem
Conventional ESD protection circuits in integrated circuits face gate leakage issues due to thin gate oxide layers in MOS capacitors, leading to erroneous activation during normal operations and potential malfunction.
Innovation Solution
A cross-domain ESD protection circuit design that includes current path switches, MOS capacitors, and a node voltage control circuit to manage node voltages, preventing erroneous activation by locking voltages to correct logic levels even with gate leakage, and allowing for more advanced semiconductor manufacturing to minimize circuit area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If MOS capacitors are used in ESD protection circuits to reduce circuit area, then circuit area is reduced, but gate leakage occurs due to thin gate oxide layers in advanced semiconductor manufacturing processes
Solution Approach 1:
The ESD protection circuit is divided into multiple domains (first power domain and second power domain) with separate current path switches (first and second current path switches) and associated control circuits. This segmentation allows independent control of each domain's protection mechanism, enabling the first current path switch to be properly controlled despite gate leakage in the first MOS capacitor, while maintaining overall circuit area efficiency.
Solution Approach 2:
A node voltage control circuit is introduced as an intermediary between the second current path switch control and the first current path switch control. This intermediary circuit receives the second node voltage and actively adjusts the first node voltage to compensate for gate leakage effects, ensuring the first current path switch remains properly controlled without requiring a thicker gate oxide layer.
2Manufacturing precision
If gate oxide layer is made thinner to enable advanced semiconductor manufacturing, then manufacturing precision is improved, but gate leakage increases causing erroneous activation
Solution Approach 1:
The node voltage control circuit implements a feedback mechanism where the second node voltage (from the second current path switch control) is fed into the control circuit, which then actively adjusts the first node voltage based on this feedback. This closed-loop control compensates for gate leakage effects and prevents erroneous activation of the first current path switch, allowing thin gate oxide layers to be used without reliability penalties.
3Reliability
If cross-domain voltage control is implemented to prevent erroneous activation, then reliability is improved, but device complexity increases
Solution Approach 1:
The node voltage control circuit serves multiple functions: it controls the first node voltage based on the second node voltage, compensates for gate leakage effects, prevents erroneous activation of the first current path switch, and maintains proper operation across both power domains. This multi-functionality reduces the need for separate dedicated circuits for each function, thereby limiting the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively prevents erroneous activation of current path switches due to gate leakage, ensuring normal operation of integrated circuits while allowing for reduced circuit area through advanced manufacturing techniques.
Implementation Method 1
a first MOS capacitor coupled between the first power terminal and the first node, and arranged to be operably charged when the first node voltage is at the logic low level
Data Source
AI summary
An ESD protection circuit includes: a first current path switch arranged in a parallel connection with a first circuit and turned off when a first node voltage is at a logic low level; a first node for providing the first node voltage; a resister element coupled between a first power terminal and the first node; a MOS capacitor coupled between the first node and a first fixed-voltage terminal; a second current path switch arranged in a parallel connection with a second circuit and controlled by a second node voltage; a switch control circuit for providing the second node voltage; and a node voltage control circuit for controlling the first node voltage according to the second node voltage to ensure the first current path switch is turned off when the first power terminal supplies power to the first circuit while the second power terminal supplies power to the second circuit.