ESD Protection Structure With P-N-P-N-P Junction for Thin Gate Oxides
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Solution Overview
Problem
Integrated circuit products are susceptible to damage from electrostatic discharge (ESD) due to thinning gate oxide layers, necessitating effective ESD protection components near I/O pins to meet industry standards.
Innovation Solution
An electrostatic discharge protection device comprising a specific well region and doped region structure in a P-type semiconductor substrate, including N-type and P-type well regions, doped regions, and a gate structure, forming a P-N-P-N-P junction to discharge ESD currents effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the gate oxide layer is made thinner to enable deep sub-micron integration, then the transistor size and integration density are improved, but the susceptibility to ESD damage increases
Solution Approach 1:
The patent introduces a PNP transistor as an intermediary protection mechanism between the ESD threat and the vulnerable thin gate oxide. This parasitic PNP transistor, formed by the well and doped regions, acts as a mediator that diverts ESD currents away from the core circuit through its collector-base junction, protecting the thin oxide layers while allowing the transistors to maintain their small deep sub-micron dimensions for high integration density
2Reliability
If ESD protection components are placed close to all I/O pads, then the protection effectiveness is improved, but the device complexity and area increase
Solution Approach 1:
The patent merges the ESD protection function with the existing transistor structure by utilizing the parasitic PNP transistor that naturally forms from the well and doped regions. This combines the protection function with the device structure itself, eliminating the need for separate protection components and reducing overall device complexity while maintaining effective protection at each I/O pad
Solution Approach 2:
The well and doped regions serve multiple functions: they form the active transistor components for normal operation and simultaneously create the parasitic PNP transistor structure for ESD protection. This multi-functionality allows the same structural elements to provide both computational functionality and protection, reducing the need for additional dedicated protection components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device provides efficient ESD protection with lower trigger voltage, non-snapback characteristics, and reduced holding voltage, preventing latch-up and ensuring reliable operation.
Implementation Method 1
electrostatic discharge protection device
Implementation Method 2
forming a P-N-P-N-P junction to discharge ESD currents effectively
Data Source
AI summary
An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes an N-type deep well region (DNW), first and second high-voltage P- and N-type well regions (first and second HVPW and HVNW), a low-voltage N-type well region (LVNW), first and second P- and first N-type doped regions in a P-type semiconductor substrate, and a gate structure. The first and second HVPW and HVNW are located on the DNW. The LVNW is located on the first HVPW. The first P- and N-type doped regions and second P-type doped region are located on the LVNW and the second HVNW and HVPW. The first P-type doped region is electrically connected to a first voltage source. The gate structure on the first and second HVPW and the first HVNW, the second P-type doped region and the first N-type doped region are electrically connected to a second voltage source.