ESD Protection Circuit With Segmented Control Transistors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing ESD protection mechanisms in transistors suffer from current leakage issues due to improper control, leading to increased power consumption in integrated circuits, especially when multiple transistors are required to protect target circuits.
Innovation Solution
An ESD protection apparatus comprising an ESD circuit, a detection circuit, and a logic circuit, where the ESD circuit includes a field effect transistor (FET) to release ESD energy, and the detection circuit with multiple FETs and resistors simulates a two-terminal element to control the ESD protection apparatus between normal and discharge modes, minimizing current leakage by tightly turning off the FET in normal mode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transistor is used to release ESD energy in existing ESD protection mechanisms, then ESD protection function is achieved, but current leakage occurs and power consumption increases
Solution Approach 1:
The patent divides the ESD protection function into multiple independent units, each with its own control transistor. The control transistors are connected in series, creating a segmented control structure where each unit can be independently controlled. This segmentation allows the system to maintain ESD protection capability while reducing overall leakage current, as each segmented unit contributes only a portion of the total leakage rather than a single transistor carrying the full leakage current.
Solution Approach 2:
The patent implements preliminary control actions through detection circuits that monitor voltage conditions before ESD events occur. The control transistors are pre-configured in a turned-off state during normal operation, and only activated when ESD conditions are detected. This preliminary positioning of transistors in the off-state minimizes leakage current before ESD events, while still maintaining the capability to provide protection when needed.
2Ease of operation
If the transistor is periodically turned on by switching voltage during normal operations, then switching function is achieved, but leakage current increases power consumption
Solution Approach 1:
The patent implements dynamic control of transistor states based on operational conditions. The control transistors dynamically switch between turned-off and turned-on states according to detected voltage conditions. During normal operations, the transistors remain turned off to minimize leakage. When ESD conditions are detected, the transistors dynamically activate to provide protection. This dynamic state management resolves the contradiction by adapting transistor operation to actual needs rather than periodic switching.
Solution Approach 2:
The patent incorporates feedback mechanisms through detection circuits that continuously monitor voltage conditions and provide feedback to control transistors. The detection circuits sense voltage levels and use this feedback information to control the state of protection transistors. This feedback-driven control ensures transistors remain off during normal operations (minimizing leakage) and activate only when ESD conditions are detected, eliminating unnecessary periodic switching and associated power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces current leakage and power consumption by ensuring the FET remains turned off during normal operations, with leakage duration less than 0.2 nanoseconds and leakage current less than 200 milliamperes, compared to existing technologies.
Implementation Method 1
The ESD circuit is arranged to perform ESD protection between the first reference voltage wire and the second reference voltage wire. The first FET is arranged to release ESD energy
Data Source
AI summary
An electrostatic discharge (ESD) protection apparatus includes: an ESD circuit, arranged to perform ESD protection, wherein the ESD circuit includes a first Field Effect Transistor (FET) arranged to release ESD energy; a detection circuit, arranged to perform detection to control the ESD protection apparatus to selectively operate in one of a normal mode and a discharge mode; and a logic circuit, arranged to withstand any oscillation due to resistance-inductance-capacitance (RLC) characteristics of the detection circuit. In the detection circuit, different subsets of a plurality of resistors are respectively combined with a portion of a first serial connection circuit, an entirety of the first serial connection circuit, and a second FET to form different serial connection circuits, to configure the second FET to approach a state of being completely turned off in the normal mode.