ESD Protection Structure With Segmented BJT Emitters
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Solution Overview
Problem
Electrostatic discharge (ESD) can cause damage to integrated circuits due to transient power discharge, and existing ESD protection structures may not adequately reduce emitter injection efficiency and enhance holding voltage.
Innovation Solution
The electrostatic discharge protection structure incorporates doped regions of different conductivity types connected with doped regions used as emitters of bipolar junction transistors (BJTs) to reduce emitter injection efficiency and enhance holding voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ESD protection structures are used, then basic ESD protection is provided, but emitter injection efficiency is not adequately reduced and holding voltage is not sufficiently enhanced
Solution Approach 1:
The emitter region is segmented into multiple doped regions (first doped region, second doped region, third doped region, fourth doped region) with different conductivity types arranged in a specific pattern. This segmentation allows independent optimization of emitter injection efficiency and holding voltage characteristics without requiring complete redesign of the entire ESD protection structure.
Solution Approach 2:
Different doped regions are assigned different conductivity types (first conductivity type and second conductivity type) and positioned at specific locations relative to the gate structure. This local differentiation of properties enables precise control over the electrical characteristics, reducing emitter injection efficiency in specific areas while maintaining overall structural integrity.
2Reliability
If doped regions of different conductivity types are added to reduce emitter injection efficiency, then holding voltage is enhanced, but device complexity increases
Solution Approach 1:
Multiple doped regions with different conductivity types are merged into a unified emitter structure that works together to achieve both reduced emitter injection efficiency and enhanced holding voltage. The first and second doped regions are connected, as are the third and fourth doped regions, creating integrated functional units that accomplish multiple objectives simultaneously.
Solution Approach 2:
The composite doped region structure serves multiple functions: it acts as the emitter for the bipolar junction transistor, provides ESD protection, reduces emitter injection efficiency, and enhances holding voltage. This multi-functionality eliminates the need for separate structures for each function, thereby managing complexity while achieving multiple goals.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively lowers the emitter injection efficiency of the corresponding bipolar junction transistors, thereby enhancing the holding voltage and improving the electrical performance of the ESD protection structure.
Implementation Method 1
Doped regions of different conductivity types are connected with doped regions used as emitters of bipolar junction transistors (BJTs) for reducing the emitter injection efficiency
Implementation Method 2
Electrostatic discharge (ESD) is a discharge effect where charges accumulate on a non-conductor or an ungrounded conductor and travel rapidly through a discharge path in a short period of time
Data Source
AI summary
An electrostatic discharge protection structure includes a semiconductor substrate, a gate structure disposed on the semiconductor substrate, a first well region of a first conductivity type disposed in the semiconductor substrate, a first doped region of the first conductivity type, a second doped region of a second conductivity type, a third doped region of the first conductivity type, and a fourth doped region of the second conductivity type. The first and second doped regions are disposed in the first well region and connected with each other. The second doped region is an emitter of a first bipolar junction transistor. The third and fourth doped regions are disposed in the semiconductor substrate and connected with each other. The third and second doped regions are located at two opposite sides of the gate structure in a first horizontal direction. The third doped region is an emitter of a second bipolar junction transistor.