Integrated ESD Protection in Semiconductor Light Emitting Devices

Solution Overview

Problem

Current semiconductor light emitting devices require a Zener diode to prevent damage from static electricity, complicating the manufacturing process, limiting device size, and increasing costs due to the need for additional components.

Innovation Solution

A semiconductor light emitting device is designed with a protective element and a light emitting structure where the protective element, comprising lower conductivity-type semiconductor layers, is electrically connected in parallel to the light emitting structure, which includes upper conductivity-type semiconductor layers, to provide protection against reverse electrostatic discharge without the need for a separate Zener diode, simplifying the manufacturing process and reducing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a Zener diode is added to prevent static electricity damage, then reliability is improved, but device complexity increases and manufacturing cost increases

Engineering Contradiction:

Improvetolerance to reverse electrostatic dischargeVSAvoidmanufacturing process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The protective element is integrated into the light emitting device structure, merging the protection function with the existing semiconductor layers. The first and second lower conductivity-type semiconductor layers are combined with the light emitting structure in a single integrated device, eliminating the need for a separate Zener diode component while maintaining ESD protection capability

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The semiconductor layers serve dual functions: the first and second lower conductivity-type semiconductor layers provide both structural support and electrostatic discharge protection, while the active layer provides light emission. This multi-functionality reduces the need for separate protective components

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If a Zener diode is added to prevent static electricity damage, then reliability is improved, but manufacturing cost increases

Engineering Contradiction:

Improvetolerance to reverse electrostatic dischargeVSAvoidunit manufacturing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The protective element is integrated into the light emitting device structure, merging the protection function with the existing semiconductor layers. The first and second lower conductivity-type semiconductor layers are combined with the light emitting structure in a single integrated device, eliminating the need for a separate Zener diode component while maintaining ESD protection capability

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The light emitting device structure itself provides the protection function through its inherent semiconductor layers. The first and second lower conductivity-type semiconductor layers naturally provide ESD protection without requiring external protective components, making the device self-protecting

Inventive Principle:

Principle #25Self-service

3Reliability

If a Zener diode is added to prevent static electricity damage, then reliability is improved, but device size is limited

Engineering Contradiction:

Improvetolerance to reverse electrostatic dischargeVSAvoiddevice size

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The protective element is integrated into the light emitting device structure, merging the protection function with the existing semiconductor layers. The first and second lower conductivity-type semiconductor layers are combined with the light emitting structure in a single integrated device, eliminating the need for a separate Zener diode component while maintaining ESD protection capability

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the device's electrical characteristics, such as tolerance to reverse electrostatic discharge, improves reliability, and simplifies the manufacturing process by integrating the protective element within the device, reducing unit manufacturing costs and enabling the production of larger, high-efficiency light emitting devices.

Implementation Method 1

a semiconductor light emitting device such as a light emitting diode (LED) is a device including a material that emits light through the application of electrical energy thereto, in which energy generated by electron hole recombination at semiconductor junctions is converted into light to be emitted therefrom

Methodology Applied

Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS9076928B2Semiconductor light emitting device and method for manufacturing the same

Publication Date: 2015.07.07 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.