Integrated Circuit ESD Protection Using Seal Ring Electrodes
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Solution Overview
Problem
Existing semiconductor integrated circuits face challenges in effectively protecting against electrostatic discharge due to space constraints, where electrostatic protection circuits occupy valuable space and fail to adequately protect elements far from the protection circuit.
Innovation Solution
A semiconductor structure comprising a seal ring, a metal ring, and a power bus, with strategically placed P-type and N-type electrode areas, coupled to ground and voltage sources, respectively, to create a diode-like or bipolar junction transistor configuration that directs electrostatic discharge without occupying additional space, ensuring comprehensive protection across the integrated circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an electrostatic protection circuit is added to protect the integrated circuit, then the electrostatic discharge protection capability is improved, but the space occupied by the integrated circuit increases
Solution Approach 1:
The patent combines the electrostatic protection function with existing structural elements (seal ring, metal ring, and power bus) of the integrated circuit. By forming electrode areas directly on these existing components, the protection circuit merges with the original structure rather than adding separate protective elements, thereby achieving electrostatic discharge protection without increasing the overall circuit footprint.
Solution Approach 2:
The seal ring, metal ring, and power bus serve dual functions: their original structural/electrical functions plus the new electrostatic discharge protection function. The electrode areas formed on these components enable them to participate in both their conventional roles and the electrostatic protection mechanism, allowing one structure to perform multiple functions simultaneously.
2Area of stationary object
If the electrostatic protection circuit is arranged at a specific position to save space, then the space occupation is reduced, but the protection coverage decreases
Solution Approach 1:
The patent divides the electrostatic protection structure into multiple segmented electrode areas distributed around the integrated circuit. Instead of a single centralized protection circuit, multiple electrode areas are formed at different positions (first, second, and third electrode areas on different rings), creating distributed protection zones that collectively cover the entire circuit area.
Solution Approach 2:
The patent transitions from a two-dimensional planar protection circuit layout to a three-dimensional multi-layer structure utilizing vertical stacking. electrode areas are formed on different rings at different heights (first ring, second ring, third ring), creating a multi-level protective architecture that provides comprehensive coverage without increasing the planar footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances electrostatic discharge protection capabilities by allowing each element of the integrated circuit to be safeguarded from electrostatic damage while conserving space, thereby improving the overall protection efficiency without increasing the circuit's footprint.
Implementation Method 1
create a diode-like or bipolar junction transistor configuration that directs electrostatic discharge
Implementation Method 2
create a diode-like or bipolar junction transistor configuration that directs electrostatic discharge
Data Source
AI summary
A semiconductor structure is arranged on an integrated circuit, the integrated circuit includes a seal ring arranged at outer periphery of the integrated circuit, a metal ring arranged at an inner side of the seal ring and a power bus arranged at a side of the metal ring. The semiconductor structure includes a first P type electrode area, a second P type electrode area and a first N type electrode area. The first P type electrode area is formed at a position on a P well corresponding to the seal ring, and coupled to the seal ring. The second P type electrode area is formed at a position on the P well corresponding to the metal ring, and coupled to the metal ring. The first N type electrode area is formed at a position corresponding to the power bus, and coupled to the power bus.