Fine-Featured Etch Masks Using μDALP Crossing Patterns
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Solution Overview
Problem
Existing etching masks with fine features face challenges in resolution, alignment, material compatibility, durability, inspection, and process control, constrained by the Rayleigh criterion and optical lithography limitations, leading to defects and misalignments in semiconductor manufacturing.
Innovation Solution
Utilizing direct atomic layer processing (DALP) in a microreactor system to form etching masks with fine features through precise deposition and removal of thin films, enabling layer-by-layer control and formation of crossing patterns with acute angles to define intricate structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical lithography is used to form etching masks with fine features, then the mask can be created using conventional processes, but the resolution is fundamentally constrained by the Rayleigh criterion leading to defects and misalignments
Solution Approach 1:
The patent replaces optical lithography (electromagnetic field-based process) with direct atomic layer processing (material deposition/removal process). This substitution eliminates the Rayleigh criterion limitation by directly forming mask features at the atomic level through controlled deposition and removal cycles, achieving sub-10nm resolution without relying on optical wavelength constraints
Solution Approach 2:
The patent changes the fundamental processing parameters from optical wavelength and numerical aperture (in photolithography) to atomic layer deposition thickness control and etch selectivity. By controlling deposition thickness at the nanometer scale and using selective etching, the process achieves higher resolution and pattern fidelity while maintaining manufacturability
2Manufacturing precision
If photolithography is used to define etching mask patterns, then the mask can be formed using additive processes, but alignment accuracy deteriorates due to susceptibility to misalignment and defects
Solution Approach 1:
The patent performs preliminary alignment marker formation and fiducial creation before main pattern deposition. By pre-establishing reference features and using them for real-time alignment correction during the DALP process, the system achieves high overlay accuracy even for fine features, eliminating the cumulative alignment errors inherent in multi-step photolithography
Solution Approach 2:
The patent implements in-situ inspection and feedback control during the atomic layer processing steps. By monitoring deposited layer thickness and pattern formation in real-time, and adjusting subsequent deposition/etch parameters accordingly, the process maintains high alignment fidelity and corrects deviations before they propagate to final mask quality
3Ease of manufacture
If conventional etching mask processes are used, then the mask can be formed using standard materials, but material compatibility and mask durability are compromised
Solution Approach 1:
The patent employs composite mask structures formed through alternating deposition of different materials (e.g., silicon oxide, silicon nitride, metals) with complementary properties. Each layer provides specific functions: adhesion, etch resistance, pattern definition, or mechanical strength. This composite approach maintains compatibility with standard semiconductor materials while achieving superior mask durability and performance
Solution Approach 2:
The patent applies different materials and properties to different regions of the mask structure based on local requirements. For example, harder materials are deposited in regions requiring higher etch resistance, while more adherent materials are used at substrate interfaces. This localized material optimization achieves both ease of manufacture and enhanced durability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves high pattern fidelity, precise alignment, and efficient material removal, reducing defects and costs by ensuring uniformity and accuracy in etching masks, facilitating advanced semiconductor manufacturing.
Implementation Method 1
direct atomic layer processing (DALP)... depositing and/or removing a first strip... depositing and/or removing a second strip
Implementation Method 2
the first and second strips are configured to form a crossing pattern with a predetermined overlap region... the crossing pattern adapted, sized, and configured to form two acute angles with the smallest feature defined at the acute angle
Data Source
AI summary
The disclosure relates to systems and methods for forming etch masks using direct atomic layer processing. Specifically, the disclosure relates to methods of forming etch masks having fine features at the substrate level, using microreactor direct atomic layer processing (μDALP).