Etch Profile Simulation via Plasma Physics Parameters

The patent transforms the etch profile simulation from a simple geometric model to a physics-based model by changing the parameters from basic geometric dimensions to plasma physics parameters including reaction rates, transport coefficients, and material behavior characteristics. This allows the simulation to capture complex etch phenomena while maintaining computational feasibility through parameterized modeling approaches.

The patent introduces a calibration layer as an intermediary between the physical etch process and the simulation model. By calibrating the physics-based model against experimental SEM images and measured etch profiles, the model bridges the gap between theoretical plasma physics and actual manufacturing outcomes, significantly improving prediction accuracy without requiring complete first-principles understanding of all etch phenomena.

The patent changes the fundamental parameters of the simulation model from simple geometric descriptions to comprehensive plasma physics parameters. This includes incorporating reaction kinetics, plasma transport, and material-specific etch behavior parameters that directly influence overlay accuracy, thereby improving reliability while managing complexity through systematic parameter organization.

The patent implements a feedback mechanism where simulated etch profiles are compared against actual measured profiles from SEM images and overlay measurements. This feedback loop allows for continuous refinement and calibration of the physics-based model parameters, ensuring that the simulation reliably predicts actual etch behavior and overlay outcomes while adapting to process variations.

The patent systematically organizes multiple physics-based parameters into categorized groups (plasma generation, transport, reaction, and material parameters) with clear physical meanings and units. This structured parameter approach enables accurate etch profile prediction while making the complex model more manageable through hierarchical parameter organization and physical interpretability.

The patent performs preliminary calibration of the semi-empirical model using reference SEM images and known etch conditions before actual production use. By pre-calibrating the multiple parameters against validated experimental data, the model reduces the complexity of real-time adjustments and enables accurate predictions without requiring complex optimization during manufacturing operations.