Deposition Chamber Temperature Calibration Using Etch Rate
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Solution Overview
Problem
The existing methods for calibrating the temperature of semiconductor processing chambers are inefficient, leading to reduced accuracy and prolonged downtime due to aging heating sources and film buildup, requiring manual recalibration and additional substrates or equipment, which increases costs and reduces throughput.
Innovation Solution
A non-contact method using the measurement of etch rates to determine the temperature of the process chamber, which allows for automated calibration without the need for substrates, by depositing and etching a film on the substrate support and comparing the measured temperature curve to a calibration curve to adjust temperature sensors and heat sources.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If manual recalibration is performed periodically to improve temperature accuracy, then temperature measurement accuracy is improved, but production downtime increases and throughput decreases
Solution Approach 1:
The system performs automated self-calibration using the substrate support structure itself as the calibration substrate. The substrate support is heated to a known temperature, a film is deposited on it, and the deposit rate is measured. This self-service calibration eliminates the need for external calibration equipment and manual intervention, allowing calibration to be performed quickly without production downtime while maintaining temperature measurement accuracy.
Solution Approach 2:
The calibration process is performed preliminarily by establishing a reference deposit rate at a known temperature before production begins. This preliminary calibration data is stored and used to correct subsequent temperature measurements, allowing the system to maintain accuracy without requiring frequent interruptions for recalibration.
2Measurement precision
If traditional calibration methods using additional substrates or equipment are used, then temperature calibration accuracy is improved, but calibration costs increase
Solution Approach 1:
The substrate support structure serves multiple functions: it is both the heating element during production and the calibration substrate during calibration. The same substrate support that holds wafers during manufacturing is used to deposit films and measure deposit rates for calibration. This multi-functionality eliminates the need for separate calibration substrates or specialized calibration equipment, reducing material consumption and costs while maintaining calibration accuracy.
Solution Approach 2:
Instead of using physical calibration substrates, the system creates a virtual reference by measuring the deposit rate on the substrate support at a known temperature. This reference deposit rate is stored and used to correct temperature measurements, effectively copying the calibration function into the control system rather than requiring physical calibration materials.
3Manufacturing precision
If frequent recalibration is performed to maintain temperature accuracy, then temperature control precision is improved, but calibration time and operational downtime increase
Solution Approach 1:
The system replaces manual mechanical calibration procedures with an automated measurement and calculation process. The substrate support is heated to a known temperature, a film is deposited, and the deposit rate is automatically measured and used to calculate temperature corrections. This substitution of automated electronic measurement and calculation for manual mechanical calibration significantly reduces calibration time and allows more frequent calibration without production downtime.
Solution Approach 2:
The system changes the calibration approach by using deposit rate measurements at different temperatures to create a calibration curve. By measuring deposit rates at multiple temperature points and establishing relationships between deposit rate, temperature, and pressure, the system can accurately determine temperature without requiring lengthy calibration procedures at each temperature point.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method increases the accuracy of temperature measurement by reducing the impact of variables like coating formation and pyrometer drift, enabling more precise temperature control and reducing calibration time and costs by eliminating the need for manual recalibration and additional substrates.
Implementation Method 1
a plurality of heating lamps disposed below and above the substrate, allows the substrate to be heated
Implementation Method 2
depositing a first layer of a film on the substrate support using the gas
Implementation Method 3
etching the first layer of the film from the substrate support at the first temperature
Data Source
AI summary
A method and apparatus for calibrating a temperature within a processing chamber are described. The method includes determining an etch rate of a layer within the processing chamber. The processing chamber is a deposition chamber configured for use during semiconductor manufacturing. The etch rate is utilized to determine a temperature within the processing chamber. The temperature within the processing chamber is then subsequently compared to a calibrated temperature to determine a temperature offset. The etch rate is determined using any one of a pyrometer, a reflectometer, a camera, or a mass sensor.