Etch Reactor Plasma Cleaning During ESC Substrate Discharge
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Solution Overview
Problem
The existing in-situ chamber cleaning (ICC) process after substrate removal from an electrostatic chuck (ESC) increases processing time and erodes components within the manufacturing environment.
Innovation Solution
A method that involves electrostatically securing a substrate to an ESC, using a first plasma to etch the substrate, and then using an oxygen-containing plasma to remove etchant byproducts and discharge the substrate from the ESC, all without performing an intermediate ICC.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an in-situ chamber cleaning (ICC) process is performed after substrate removal from the electrostatic chuck (ESC), then the chamber is cleaned of etchant byproducts, but the processing time increases and components within the manufacturing environment erode
Solution Approach 1:
The patent combines the substrate discharge function and chamber cleaning function into a single integrated plasma process. The plasma serves dual purposes: discharging the electrostatic chuck to release the substrate and simultaneously cleaning the chamber walls of etchant byproducts. This eliminates the need for a separate ICC step, reducing processing time while maintaining chamber cleanliness.
Solution Approach 2:
The plasma process is designed to perform multiple functions simultaneously: it acts as both a discharge mechanism for the ESC and a cleaning mechanism for the chamber. By making the plasma process universal, the patent eliminates redundant steps and improves overall process efficiency without compromising either substrate release or chamber cleanliness.
2Reliability
If an in-situ chamber cleaning (ICC) process is performed after substrate removal from the electrostatic chuck (ESC), then the chamber is cleaned of etchant byproducts, but components within the manufacturing environment erode
Solution Approach 1:
The patent merges the discharge and cleaning operations into one simultaneous process. The ESC is discharged and the chamber is cleaned during the same plasma exposure period, preventing the ESC from being exposed to cleaning plasma twice (once during discharge and again during separate ICC), thereby reducing erosion and extending component life.
Solution Approach 2:
The cleaning action occurs continuously during the discharge process rather than as a separate subsequent step. This continuous dual-function approach ensures that the ESC is not subjected to prolonged or repeated plasma exposure, minimizing erosion while maintaining effective chamber cleaning throughout the process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces overall substrate processing time by approximately 13% and improves throughput by eliminating the need for a separate ICC process, while also extending the lifespan of ESC components by protecting them from erosion during cleaning.
Implementation Method 1
a substrate is electrostatically secured to an electrostatic chuck (ESC) for the duration of a processing period
Implementation Method 2
The substrate may be removed from the ESC using a conductive plasma to discharge the electrostatic force securing the substrate to the ESC
Implementation Method 3
A dechuck plasma may be introduced to the chamber of the etch reactor to dechuck (or discharge) the substrate during dechuck step. The oxygen-based plasma may act as a conductive path for the charge on the processed substrate to discharge to the wall of the chamber
Implementation Method 4
The oxygen-based plasma may be provided for a duration sufficient to soften and remove all etchant byproduct deposited on the walls and other component surfaces within the chamber of the etch reactor
Implementation Method 5
A first plasma is provided into the chamber to etch one or more layers on the substrate
Data Source
AI summary
A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber for a time period sufficient to trim the photoresist and remove a portion of the etchant byproduct. A second time period sufficient to electrostatically discharge the substrate using the second plasma is determined. Responsive to deactivating one or more chucking electrodes of the electrostatic chuck, the second plasma is provided into the chamber for the second time period and the substrate is removed from the chamber.