Etch-Resistance Layer for Semiconductor Alignment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices with multiple metal wiring layers and dielectric layers are developed with increasing density and decreasing dimensions, alignment errors between metal layers lead to manufacturing issues such as low device reliability and short-circuits due to partial etching of interlayer dielectric layers.
Innovation Solution
The formation of an etch-resistance layer between metal wirings and interlayer dielectric layers prevents partial etching by creating a distinct etching rate difference, ensuring accurate alignment and reliability through the use of ion implantation or plasma treatment to introduce atoms like Si, C, N, and B into the surface region of the dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation or plasma treatment is used to create an etch-resistance layer, then manufacturing precision is improved by preventing partial etching, but device complexity increases due to additional process steps
Solution Approach 1:
The patent applies preliminary action by forming an etch-resistance layer on the interlayer dielectric surface before the metal wiring formation process. This layer is created through ion implantation or plasma treatment that introduces atoms (Si, C, N, B) into the dielectric surface, establishing protective characteristics in advance that prevent partial etching during subsequent manufacturing steps, thereby improving alignment accuracy between metal layers.
2Productivity
If multiple metal wiring layers are used to increase density, then productivity is improved, but manufacturing precision deteriorates due to alignment errors between layers
Solution Approach 1:
The etch-resistance layer is formed in advance on each interlayer dielectric before metal wiring deposition, creating a protective barrier that maintains dimensional stability during etching processes. This preliminary protection ensures that even as multiple metal layers are added to increase density, each layer maintains its precise alignment with others, preventing the accumulation of alignment errors.
3Productivity
If dimensions are decreased to increase element density, then productivity is improved, but manufacturing precision worsens due to increased sensitivity to alignment errors
Solution Approach 1:
The patent applies local quality by modifying only the surface region of the interlayer dielectric where the etch-resistance layer is formed through ion implantation or plasma treatment. This localized modification introduces specific atoms (Si, C, N, B) into the surface region to create distinct etching rate differences, providing enhanced protection precisely where needed at the interfaces between metal wirings and dielectric layers, thereby maintaining alignment accuracy even as overall dimensions decrease.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the reliability of semiconductor devices by preventing partial etching of interlayer dielectric layers, reducing alignment errors and improving the overall manufacturing process by ensuring precise alignment of metal wiring layers.
Implementation Method 1
The formation of an etch-resistance layer between metal wirings and interlayer dielectric layers prevents partial etching by creating a distinct etching rate difference, ensuring accurate alignment and reliability through the use of ion implantation or plasma treatment to introduce atoms like Si, C, N, and B into the surface region of the dielectric layers
Implementation Method 2
The formation of an etch-resistance layer between metal wirings and interlayer dielectric layers prevents partial etching by creating a distinct etching rate difference, ensuring accurate alignment and reliability through the use of ion implantation or plasma treatment to introduce atoms like Si, C, N, and B into the surface region of the dielectric layers
Data Source
AI summary
In a method for manufacturing a semiconductor device, a first interlayer dielectric layer is formed over a substrate. First recesses are formed in the first interlayer dielectric layer. First metal wirings are formed in the first recesses. A first etch-resistance layer is formed in a surface of the first interlayer dielectric layer between the first metal wirings but not on upper surfaces of the first metal wirings. A first insulating layer is formed on the first etch-resistance layer and the upper surfaces of the first metal wirings.