Etch Stop Layer for Semiconductor Through Via Reliability
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Solution Overview
Problem
Existing semiconductor chip manufacturing technologies face challenges in securing the reliability of connection structures due to exposure of landing pad surfaces during the etching process for through silicon via formation, leading to potential contamination and reduced insulation characteristics.
Innovation Solution
Incorporating an etch stop layer between the bottom and top interlayer insulation layers, isolated from direct contact with the landing pad, to control the etching process and prevent exposure of the landing pad surface, along with a via insulation layer to protect the substrate and interlayer insulation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the etching process is performed to form through silicon via, then the through via is formed to connect landing pad, but the landing pad surface is exposed leading to contamination and reduced insulation characteristics
Solution Approach 1:
An etch stop layer is introduced as an intermediary layer between the landing pad and the etching process. This layer selectively stops the etching reaction before it reaches the landing pad, preventing direct exposure and contamination of the landing pad surface while still allowing the through via to be formed through the substrate and interlayer insulation layers.
Solution Approach 2:
The etch stop layer is formed in advance before the through via etching process. This preliminary action ensures that when the etching is performed, the landing pad is already protected by the etch stop layer, preventing contamination before it can occur.
2Reliability
If the etching process is performed to form through silicon via, then the through via is formed, but the insulation characteristics are reduced due to landing pad exposure
Solution Approach 1:
The etch stop layer serves as a protective intermediary that prevents the etching process from directly exposing the landing pad. By stopping the etch before it reaches the landing pad, the insulation characteristics are maintained as the landing pad surface remains covered and protected.
3Object-affected harmful factors
If the etch stop layer is isolated from direct contact with the landing pad, then contamination is prevented, but the structure complexity increases
Solution Approach 1:
The etch stop layer is positioned and dimensioned to be isolated from direct contact with the landing pad, creating a protective buffer zone. This isolation ensures that even if etching variations occur, the landing pad cannot be directly exposed, providing robust contamination prevention.
Solution Approach 2:
The insulation layer structure is segmented into multiple functional layers: the bottom interlayer insulation layer, the etch stop layer, and the top interlayer insulation layer. This segmentation allows each layer to perform its specific function - the etch stop layer specifically protects the landing pad while the other layers provide structural support and insulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maximally reduces the exposure of the landing pad surface during etching, preventing contamination and ensuring reliable insulation characteristics and improved semiconductor chip performance.
Implementation Method 1
forming a preliminary through via hole that extends through the substrate, from a second surface of the substrate that is opposite to the first surface of the substrate, to expose the etch stop layer
Data Source
AI summary
Semiconductor chips and methods of manufacturing the same are provided. The semiconductor chip includes a substrate, an interlayer insulation layer including a bottom interlayer insulation layer on an upper surface of the substrate and a top interlayer insulation layer on the bottom interlayer insulation layer, an etch stop layer between the bottom interlayer insulation layer and the top interlayer insulation layer, a landing pad on the interlayer insulation layer, and a through via connected to the landing pad through the substrate, the interlayer insulation layer, and the etch stop layer. The etch stop layer is isolated from direct contact with the landing pad.