Etch Stop Pattern Controls Slit Depth in 3D Semiconductor Devices
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Solution Overview
Problem
The manufacturing of three-dimensional semiconductor devices is more complex compared to two-dimensional devices, requiring innovative methods to simplify the process and improve integration.
Innovation Solution
A semiconductor device design featuring a channel pillar with surrounding conductive patterns and an etch stop pattern, along with a manufacturing method involving the formation of stack structures, slits, and replacement of sacrificial layers with conductive patterns to create a three-dimensional structure, which simplifies the manufacturing process and enhances integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional semiconductor device structures are implemented to achieve high integration, then device integration and storage capacity are improved, but manufacturing process complexity increases
Solution Approach 1:
The manufacturing process is divided into separate stages: forming the channel pillar structure first, then creating the etch stop pattern, and finally forming the conductive patterns. This segmentation allows each component to be manufactured independently with optimized processes, reducing overall manufacturing complexity while achieving high integration density
Solution Approach 2:
The etch stop pattern is formed in advance before the conductive patterns are created. This preliminary action defines the depth and position of subsequent conductive pattern formation, enabling precise control of the three-dimensional structure without requiring complex real-time manufacturing coordination
2Manufacturing precision
If conventional manufacturing methods are used for three-dimensional devices, then existing process tools can be utilized, but precise control of slit depth and conductive pattern formation becomes difficult
Solution Approach 1:
The etch stop pattern serves as an intermediary layer between the channel pillar and the conductive patterns. It acts as a physical stop during etching operations, automatically limiting the depth of slit formation and conductive pattern deposition without requiring complex process control systems
Solution Approach 2:
The patent replaces complex mechanical depth control systems with a material-based etch stop mechanism. Instead of relying on precise mechanical positioning and depth sensing equipment, the etch stop pattern provides inherent depth control through its physical presence as an etching barrier
Data Source
AI summary
A semiconductor device and a method of manufacturing a semiconductor device pertain to a semiconductor device having a channel pillar extending in a first direction and a first conductive pattern surrounding the channel pillar. The semiconductor device also has second conductive patterns surrounding the channel pillar above the first conductive pattern, wherein the second conductive patterns are stacked in the first direction and spaced apart from each other. The semiconductor device further has an etch stop pattern disposed above the first conductive pattern and below the second conductive patterns.