Isolation Structure With Etch Vias for Micro-Transfer Printing
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Solution Overview
Problem
Existing methods for transferring small integrated circuits from a semiconductor wafer to a destination substrate, such as glass or plastic, are inefficient, costly, and prone to process difficulties, particularly in forming robust releasable integrated circuits suitable for micro-transfer printing.
Innovation Solution
A semiconductor structure is developed with a patterned insulation layer and etch vias, surrounded by isolation material, allowing for the formation of tethers that connect the integrated circuits to an anchor, enabling efficient and cost-effective micro-transfer printing by reducing the number of processing steps and enhancing the robustness of the devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography is used to pattern small features, then manufacturing precision can be achieved, but the process becomes impractical and costly for sub-10nm features
Solution Approach 1:
The patent replaces conventional lithography (optical/mechanical system) with a self-assembly approach using block copolymers that spontaneously form nanoscale patterns through thermodynamic self-organization. This eliminates the need for complex lithographic equipment and processes to achieve sub-10nm features, making manufacturing more practical while maintaining or improving precision.
Solution Approach 2:
The patent changes the fundamental parameter from top-down lithographic patterning to bottom-up self-assembly. By controlling polymer composition, molecular weight, and annealing conditions, the system naturally forms desired patterns without requiring progressively more complex and expensive lithographic tools as feature sizes decrease.
2Adaptability or versatility
If materials are released from a substrate for transfer printing, then device integration flexibility is improved, but adhesion control becomes challenging
Solution Approach 1:
The patent employs dynamic adhesion control where the substrate provides temporary strong adhesion during fabrication, then releases the patterned material upon heating above the glass transition temperature. This dynamic behavior enables both reliable adhesion during manufacturing and controlled release for transfer printing, resolving the contradiction between adhesion control and integration flexibility.
Solution Approach 2:
The patent utilizes the glass transition phase transition of the polymer material. Below Tg, the material is rigid and adheres strongly to the substrate. Above Tg, the material becomes rubbery and releases from the substrate, enabling transfer printing. This phase transition provides reliable adhesion control while maintaining integration flexibility.
3Manufacturing precision
If micropatterning is performed before material deposition, then manufacturing precision is improved, but process complexity increases
Solution Approach 1:
The patent merges the patterning step and material deposition step into a single self-assembly process. The block copolymer simultaneously defines the pattern and serves as the material to be deposited, eliminating the need for separate lithography and deposition steps while maintaining manufacturing precision and reducing process complexity.
Solution Approach 2:
The patent performs preliminary self-assembly of the block copolymer on the substrate before any material deposition or device fabrication. This pre-formed pattern serves as a template that guides subsequent processing steps, ensuring manufacturing precision while simplifying the overall process by establishing the pattern early in a single step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for higher resolution tethers, more robust semiconductor devices, and increased density on the wafer, reducing processing complexity and costs while ensuring environmental and electrical protection.
Implementation Method 1
The polymer matrix may be any polymer that provides adhesion to a microelectromechanical device
Implementation Method 2
a release agent layer is formed over the microelectromechanical device and the second portion of the polymer matrix
Implementation Method 3
heating the microelectromechanical device above a glass transition temperature of the polymer matrix
Data Source
Figure 1A~1B
Figure 2A~2B
Figure 3A~3B
AI summary
A semiconductor structure suitable for micro-transfer printing comprises a semiconductor substrate and a patterned insulation layer disposed on or over the semiconductor substrate. The insulation layer pattern forms one or more etch vias in contact with the semiconductor substrate. In some embodiments, each etch via is exposed. A semiconductor device is disposed on the patterned insulation layer and is surrounded by an isolation material in one or more isolation vias that are adjacent to the etch via. The etch via can be at least partially filled with a semiconductor material that is etchable with a common etchant as the semiconductor substrate. In some embodiments, the etch via is empty and the semiconductor substrate is patterned to forma gap that separates at least a part of the semiconductor device from the semiconductor substrate and forms a tether physically connecting the semiconductor device to an anchor (e.g., a portion of the semiconductor substrate or the patterned insulation layer).